參數(shù)資料
型號： SSM3K09FU
廠商： Toshiba Corporation
英文描述： High Speed Switching Applications
中文描述： 高速開關應用
文件頁數(shù)： 1/5頁
文件大?。?/td> 247K
代理商： SSM3K09FU
SSM3K09FU
2002-01-24
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K09FU
High Speed Switching Applications
Small package
Low on resistance
: R
on
= 0.7
(max) (@V
GS
=
1
0 V)
: R
on
=
1
.2
(max) (@V
GS
= 4 V)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
20
V
DC
I
D
400
Drain current
Pulse
I
DP
800
mA
Drain power dissipation (Ta 25 C)
P
D
(Note1)
150
mW
Channel temperature
T
ch
150
C
Storage temperature
T
stg
55~150
C
Note1: Mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.6 mm
2
3) Figure 1.
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
D J
1
2
3
1
2
3
0.6 mm
1.0 mm
Figure 1:
25.4 mm 25.4 mm 1.6 t,
Cu Pad: 0.6 mm
2
3
相關PDF資料
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相關代理商/技術參數(shù)
參數(shù)描述
SSM3K09FU(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 0.4A, 30V, SOT23 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 0.4A, 30V, SOT23, Transistor Polarity:N Channel, Continuous Drain 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 0.4A, 30V, SOT23, Transistor Polarity:N Channel, Continuous Drain Current Id:400mA, Drain Source Voltage Vds:30V, On Resistance Rds(on):700mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, No. of Pins:3 , RoHS Compliant: Yes
SSM3K09FU(TE85LF) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 0.4A 30V SOT23
SSM3K09FU_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications
SSM3K101TU 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3K101TU(TE85L) 功能描述:MOSFET Vds=20V Id=2.2A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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