參數(shù)資料
型號： SSM3K104TU
廠商： Toshiba Corporation
英文描述： Power Management Switch Applications
中文描述： 電源管理開關(guān)應(yīng)用
文件頁數(shù)： 1/5頁
文件大?。?/td> 149K
代理商： SSM3K104TU
SSM3K104TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K104TU
Power Management Switch Applications
High-Speed Switching Applications
1.8 V drive
Low ON-resistance:
R
on
= 110 m
(max) (@V
GS
= 1.8 V)
R
on
= 74 m
(max) (@V
GS
= 2.5 V)
R
on
= 56 m
(max) (@V
GS
= 4.0 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
20
±
12
3.0
6.0
800
500
150
55~150
V
V
DC
Pulse
Drain current
A
Drain power dissipation
mW
Channel temperature
Storage temperature range
°
C
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 t, Cu Pad: 645 mm
2
)
Note 2: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
12 V
V
DS
=
20 V, V
GS
=
0
20
Drain-Source breakdown voltage
V
(BR) DSX
12
V
Drain cutoff current
I
DSS
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
12 V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
1 mA
0.4
1.0
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
2.0 A
(Note 3)
6
10
S
I
D
=
2.0 A, V
GS
=
4.0 V
I
D
=
1.0 A, V
GS
=
2.5 V
I
D
=
0.5 A, V
GS
=
1.8 V
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
(Note 3)
44
56
(Note 3)
(Note 3)
53
70
74
110
Drain-Source ON-resistance
R
DS (ON)
m
Ω
Input capacitance
C
iss
320
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
62
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
51
pF
Turn-on time
t
on
18
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
2 A,
V
GS
=
0~2.5 V, R
G
=
4.7
Ω
14
ns
Drain-Source forward voltage
V
DSF
I
D
=
3.0 A, V
GS
=
0 V (Note 3)
0.85
1.2
V
Note 3: Pulse test
Unit: mm
2.1±0.1
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
1: Gate
2: Source
3: Drain
-
0
1.7±0.1
0
1
2
2
3
0
+
0
UFM
UFM
相關(guān)PDF資料
PDF描述
SSM3K105TU Silicon N Channel MOS Type High Speed Switching Applications
SSM3K106TU Silicon N Channel MOS Type High-Speed Switching Applications
SSM3K107TU Silicon N Channel MOS Type High-Speed Switching Applications
SSM3K116TU Silicon N Channel MOS Type High Speed Switching Applications
SSM3K119TU Silicon N Channel MOS Type Power Management Switch Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSM3K104TU(TE85L) 功能描述:MOSFET Vds=20V Id=3A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3K105TU 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3K105TU(TE85L) 功能描述:MOSFET Vds=30V Id=2.1A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3K106TU 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3K106TU(TE85L) 功能描述:MOSFET Vds=20V Id=1.2A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*