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參數(shù)資料
| 型號(hào)： | SSM3K107TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon N Channel MOS Type High-Speed Switching Applications |
| 中文描述： | 硅?頻道馬鞍山型高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 160K |
| 代理商： | SSM3K107TU |
SSM3K107TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K107TU
High-Speed Switching Applications
4 V drive
Low ON-resistance:
Absolute Maximum Ratings
(Ta = 25°C)
R
on
= 410 m
(max) (@V
GS
= 4V)
R
on
= 200 m
(max) (@V
GS
= 10V)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
20
V
Gate–source voltage
±
20
V
DC
1.5
Drain current
Pulse
3.0
A
800
Drain power dissipation
500
mW
Channel temperature
150
°
C
Storage temperature range
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 t, Cu Pad: 645 mm
2
)
Note 2: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain–source breakdown voltage
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
20
V
Drain cutoff current
I
DSS
V
DS
=
20 V, V
GS
=
0
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
20 V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
5 V, I
D
=
0.1 mA
1.1
2.3
V
Forward transfer admittance
Y
fs
V
DS
=
5 V, I
D
=
0.6 A
(Note3)
0.68
1.36
S
I
D
=
0.6 A, V
GS
=
10 V
(Note3)
135
200
Drain–source ON-resistance
R
DS (ON)
I
D
=
0.6 A, V
GS
=
4 V
(Note3)
250
410
m
Ω
Input capacitance
C
iss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
60
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
47
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
17
pF
Turn-on time
t
on
19
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
0.6 A,
V
GS
=
0 to 4 V, R
G
=
10
Ω
10
ns
Drain–source forward voltage
V
DSF
I
D
=
1.5 A, V
GS
=
0 V (Note3)
– 0.9
– 1.2
V
Note3: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
1: Gate
2: Source
3: Drain
UFM
-
0
1.7±0.1
2.1±0.1
0
1
2
2
3
0
+
0
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