參數資料
型號： SSM3K119TU
廠商： Toshiba Corporation
英文描述： Silicon N Channel MOS Type Power Management Switch Applications
中文描述： 硅?頻道馬鞍山開關式電源管理應用
文件頁數： 1/5頁
文件大小： 138K
代理商： SSM3K119TU
SSM3K119TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K119TU
Power Management Switch Applications
High Speed Switching Applications
1.8 V drive
Low ON-resistance:
R
on
= 134 m
(max) (@V
GS
= 1.8V)
R
on
= 90 m
(max) (@V
GS
= 2.5V)
R
on
= 74 m
(max) (@V
GS
= 4.0V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
30
±
12
2.5
5.0
800
500
150
55~150
V
V
DC
Pulse
Drain current
A
Drain power dissipation
mW
Channel temperature
Storage temperature range
°
C
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 t, Cu Pad: 645 mm
2
)
Note 2: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
30
V
Drain–source breakdown voltage
V
(BR) DSX
I
D
=
1 mA, V
GS
=
–12 V
18
V
Drain cutoff current
I
DSS
V
DS
=
30 V, V
GS
=
0
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
12 V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
1 mA
0.4
1.0
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
2 A
(Note3)
3.8
7.7
S
I
D
=
2.0 A, V
GS
=
4.0 V
I
D
=
1.0 A, V
GS
=
2.5 V
I
D
=
0.5 A, V
GS
=
1.8 V
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
(Note3)
55
74
(Note3)
(Note3)
67
84
90
134
Drain–source ON-resistance
R
DS (ON)
m
Ω
Input capacitance
C
iss
270
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
56
pF
Reverse transfer capacitance
C
rss
47
pF
Turn-on time
t
on
20
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
2 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
Ω
31
ns
Drain–source forward voltage
V
DSF
I
D
=
2.5 A, V
GS
=
0 V (Note3)
– 0.85
– 1.2
V
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
1: Gate
2: Source
3: Drain
UFM
-
0
1.7±0.1
2.1±0.1
0
1
2
2
3
0
+
0
相關PDF資料
PDF描述
SSM3K121TU Silicon N-Channel MOS Type Power Management Switch Applications
SSM3K122TU Power Management Switch Applications
SSM3K123TU Power Management Switch Applications
SSM3K124TU High Speed Switching Applications
SSM3K12T CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category
相關代理商/技術參數
參數描述
SSM3K119TU(TE85L) 功能描述:MOSFET Vds=30V Id=2.5A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3K121TU 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3K121TU(TE85L) 功能描述:MOSFET Vds=20V Id=3.2A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3K122TU 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications
SSM3K123TU 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications
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