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參數(shù)資料
| 型號： | SSM3K122TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Power Management Switch Applications |
| 中文描述： | 電源管理開關應用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 146K |
| 代理商： | SSM3K122TU |
SSM3K122TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K122TU
Power Management Switch Applications
High-Speed Switching Applications
1.5 V drive
Low ON-resistance:
R
on
= 304 m
(max) (@V
GS
= 1.5 V)
R
on
= 211 m
(max) (@V
GS
= 1.8 V)
R
on
= 161 m
(max) (@V
GS
= 2.5 V)
R
on
= 123 m
(max) (@V
GS
= 4.0 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
V
DSS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
20
±
10
2.0
4.0
800
500
150
55~150
V
V
DC
Pulse
Drain current
A
Drain power dissipation
mW
Channel temperature
Storage temperature range
°
C
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 t, Cu Pad: 645 mm
2
)
Note 2: Mounted on a FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
Y
fs
I
D
=
1 mA, V
GS
=
0 V
I
D
=
1 mA, V
GS
=
10 V
V
DS
=
20 V, V
GS
=
0 V
V
GS
=
±
10 V, V
DS
=
0 V
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
1.0 A
I
D
=
1.0 A, V
GS
=
4.0 V
I
D
=
1.0 A, V
GS
=
2.5 V
I
D
=
0.5 A, V
GS
=
1.8 V
I
D
=
0.3 A, V
GS
=
1.5 V
20
12
0.35
2.6
5.2
87
112
147
182
195
35
29
3.4
2.3
1.1
8.0
9.0
0.85
1
±
1
1.0
123
161
211
304
-1.2
Drain-Source breakdown voltage
V
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
μ
A
μ
A
V
S
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Drain-Source ON-resistance
R
DS (ON)
m
Ω
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate
Source Charge
Gate
Drain Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
pF
V
DS
= 10 V, I
D
= 2.0 A
V
GS
= 4 V
nC
Turn-on time
Turn-off time
Switching time
V
DD
=
10 V, I
D
=
0.5 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
Ω
I
D
=
2.0 A, V
GS
=
0 V (Note 3)
ns
Drain-Source forward voltage
V
Note 3: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
-
0
1.7±0.1
2.1±0.1
0
1
2
2
3
0
+
0
1: Gate
2: Source
3: Drain
UFM
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