- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374931 > SSM3K14T (Toshiba Corporation) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) PDF資料下載
參數(shù)資料
| 型號(hào)： | SSM3K14T |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山型（U型MOSII） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 184K |
| 代理商： | SSM3K14T |
SSM3K14T
2002-01-24
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS
II
)
SSM3K14T
DC-DC Converter
High Speed Switching Applications
Small Package
Low ON-resistance R
on
= 39 m
(max) (@V
GS
=
1
0 V)
: R
on
= 57 m
(max) (@V
GS
= 4.5 V)
High speed t
on
= 24 ns (typ.)
: t
off
=
1
9 ns (typ.)
Maximum Ratings
(Ta 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
20
V
DC
I
D
4.0
Drain current
Pulse
I
DP
(Note 2)
8.0
A
P
D
(Note 1)
0.7
Drain power dissipation (Ta 25°C)
t 10 s
1.25
W
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
55~150
C
Note 1: Mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm
2
)
Note 2: The pulse width limited by max channel temperature.
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
KDK
3
1
2
3
1
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SSM3K15CT | High-Speed Switching Applications |
| SSM3K15FU | High Speed Switching Applications Analog Switch Applications |
| SSM3K15FS | High Speed Switching Applications Analog Switching Applications |
| SSM3K15FV | High Speed Switching Applications |
| SSM3K15FV_07 | High Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSM3K14T(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 4A, 30V, SOT23 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
| SSM3K14T(TE85LF) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 4A 30V SOT23 |
| SSM3K14T_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC-DC Converter |
| SSM3K15ACT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Load Switching Applications |
| SSM3K15ACT(TPL3) | 功能描述:MOSFET SM Sig N-CH MOS 30V 0.1A 20V VGSS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。