參數(shù)資料
型號(hào)： SSM3K123TU
廠商： Toshiba Corporation
英文描述： Power Management Switch Applications
中文描述： 電源管理開關(guān)應(yīng)用
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 167K
代理商： SSM3K123TU
SSM3K123TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K123TU
Power Management Switch Applications
High-Speed Switching Applications
1.5 V drive
Low ON-resistance:
R
on
= 66 m
(max) (@V
GS
= 1.5 V)
R
on
= 43 m
(max) (@V
GS
= 1.8 V)
R
on
= 32 m
(max) (@V
GS
= 2.5 V)
R
on
= 28 m
(max) (@V
GS
= 4.0 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
V
DSS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
20
±
10
4.2
8.4
800
500
150
55~150
V
V
DC
Pulse
Drain current
A
Drain power dissipation
mW
Channel temperature
Storage temperature range
°
C
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 t, Cu Pad: 645 mm
2
)
Note 2: Mounted on a FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
Y
fs
I
D
=
1 mA, V
GS
=
0V
I
D
=
1 mA, V
GS
=
10 V
V
DS
=
20 V, V
GS
=
0V
V
GS
=
±
10 V, V
DS
=
0V
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
3.0 A
I
D
=
3.0 A, V
GS
=
4.0 V
I
D
=
3.0 A, V
GS
=
2.5 V
I
D
=
1.0 A, V
GS
=
1.8 V
I
D
=
0.5 A, V
GS
=
1.5 V
20
12
0.35
12.5
25
19
23
28
35
1010
162
150
13.6
9.8
3.8
17
30
0.8
1
±
1
1.0
28
32
43
66
1.2
Drain-Source breakdown voltage
V
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
μ
A
μ
A
V
S
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Drain-Source ON-resistance
R
DS (ON)
m
Ω
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate
Source Charge
Gate
Drain Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
pF
V
DS
= 10 V, I
DS
= 4.2 A
V
GS
= 4 V
nC
Turn-on time
Turn-off time
Switching time
V
DD
=
10 V, I
D
=
1.0 A,
V
GS
=
0~2.5 V, R
G
=
4.7
Ω
I
D
=
4.2 A, V
GS
=
0 V (Note 3)
ns
Drain-Source forward voltage
V
Note 3: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
1: Gate
2: Source
3: Drain
-
0
1.7±0.1
2.1±0.1
0
1
2
2
3
0
+
0
UFM
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