參數(shù)資料
型號(hào)： SSM3K102TU
廠商： Toshiba Corporation
英文描述： High Speed Switching Applications
中文描述： 高速開關(guān)應(yīng)用
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 149K
代理商： SSM3K102TU
SSM3K102TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K102TU
High Speed Switching Applications
1.8V drive
Low on-resistance:
R
on
= 154m
(max) (@V
GS
= 1.8 V)
R
on
= 99m
(max) (@V
GS
= 2.5 V)
R
on
= 71m
(max) (@V
GS
= 4.0 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
20
V
Gate-Source voltage
±
12
V
DC
2.6
Drain current
Pulse
5.2
A
800
Drain power dissipation
500
mW
Channel temperature
150
°
C
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 mm, Cu Pad: 645 mm
2
)
Note 2: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
55~150
°
C
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
12 V
V
DS
=
20 V, V
GS
=
0
20
Drain-Source breakdown voltage
V
(BR) DSX
10
V
Drain cut-off current
I
DSS
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
12V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
1 mA
0.4
1.0
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
1.0 A
(Note3)
3.6
6
S
I
D
=
1.0 A, V
GS
=
4.0 V
I
D
=
0.5 A, V
GS
=
2.5 V
I
D
=
0.2 A, V
GS
=
1.8 V
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
(Note3)
63
71
(Note3)
(Note3)
80
115
99
154
Drain-Source on-resistance
R
DS (ON)
m
Ω
Input capacitance
C
iss
268
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
44
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
34
pF
Turn-on time
t
on
9
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
0.25 A,
V
GS
=
0~2.5 V, R
G
=
4.7
Ω
16
ns
Drain-Source forward voltage
V
DSF
I
D
=
2.6A, V
GS
=
0 V (Note3)
0.85
1.2
V
Note3: Pulse test
Unit: mm
2.1±0.1
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
1: Gate
2: Source
3: Drain
-
0
1.7±0.1
0
1
2
2
3
0
+
0
UFM
相關(guān)PDF資料
PDF描述
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