參數(shù)資料
型號: SSM3K05FU
廠商: Toshiba Corporation
英文描述: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHALLEL MOS TYPE
中文描述: 東芝場效應晶體管硅? CHALLEL馬鞍山型
文件頁數(shù): 1/5頁
文件大小: 185K
代理商: SSM3K05FU
SSM3K05FU
2003-03-28
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K05FU
High Speed Switching Applications
Small package
Low on resistance : R
on
= 0.8
max (@V
GS
= 4 V)
: R
on
=
1
.2
max (@V
GS
= 2.5 V)
Low gate threshold voltage
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
12
V
DC
I
D
400
Drain current
Pulse
I
DP
800
mA
Drain power dissipation (Ta 25°C)
P
D
(Note 1)
150
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note 1: Mounted on FR4 board.
(25.4 mm 25.4 mm 1.6 t, Cu pad: 0.6 mm
2
3)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
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