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參數(shù)資料
| 型號： | SSM3J304T |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications |
| 中文描述： | 場效應(yīng)晶體管硅P溝道MOS開關(guān)式電源管理應(yīng)用高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 244K |
| 代理商： | SSM3J304T |
SSM3J304T
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J304T
○
Power Management Switch Applications
○
High-Speed Switching Applications
1.8 V drive
Low ON-resistance:
R
on
= 297 m
(max) (@V
GS
= -1.8 V)
R
on
= 168 m
(max) (@V
GS
= -2.5 V)
R
on
= 127 m
(max) (@V
GS
= -4.0 V)
Absolute Maximum Ratings (Ta = 25
C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
-20
V
Gate-source voltage
±
8
V
DC
-2.3
Drain current
Pulse
-4.6
A
Drain power dissipation
700
mW
Channel temperature
T
ch
150
°
C
Storage temperature
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
-1 mA, V
GS
=
0
I
D
=
-1 mA, V
GS
=
+
8 V
V
DS
=
-20 V, V
GS
=
0
V
GS
=
±
8
V, V
DS
=
0
V
DS
=
-3 V, I
D
=
-1 mA
V
DS
=
-3 V, I
D
=
-1 A
I
D
=
-1.0 A, V
GS
=
-4 V
I
D
=
-0.5 A, V
GS
=
-2.5 V
I
D
=
-0.2 A, V
GS
=
-1.8 V
-20
Drain-source breakdown voltage
V
(BR) DSX
-12
V
Drain cutoff current
I
DSS
-10
μ
A
Gate leakage current
I
GSS
±
1
μ
A
Gate threshold voltage
V
th
Y
fs
-0.3
-1.0
V
Forward transfer admittance
(Note 2)
2.4
4
S
(Note 2)
88
127
(Note 2)
120
168
Drain-source ON-resistance
R
DS (ON)
(Note 2)
172
297
m
Ω
Input capacitance
C
iss
335
Output capacitance
C
oss
70
Reverse transfer capacitance
C
rss
V
DS
=
-10 V, V
GS
=
0, f
=
1 MHz
56
pF
Turn-on time
t
on
20
Switching time
Turn-off time
t
off
V
DD
=
-10 V, I
D
=
-1A,
V
GS
=
0 ~ -2.5 V, R
G
=
4.7
Ω
20
ns
Drain-source forward voltage
V
DSF
I
D
=
2.3 A, V
GS
=
0 (Note 2)
0.85
1.2
V
Note 2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
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| SSM3J305T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications |
| SSM3J305T(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
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