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參數(shù)資料
| 型號： | SI9801DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge |
| 中文描述： | N-/P-Channel，，快速切換減少一半Qg和橋 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 71K |
| 代理商： | SI9801DY |
Si9801DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
5-2
Document Number: 70712
S-61825—Rev. C, 16-Aug-99
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.6
V
V
DS
= V
GS
, I
D
= –250 A
P-Ch
–0.6
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
N-Ch
100
nA
P-Ch
100
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 20 V, V
GS
= 0 V
N-Ch
1
A
V
DS
= –20 V, V
GS
= 0 V
P-Ch
–1
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 C
N-Ch
25
V
DS
= –20 V, V
GS
= 0 V, T
J
= 70 C
P-Ch
–25
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
N-Ch
20
A
V
DS
= –5 V, V
GS
= –4.5 V
P-Ch
–20
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= 4.5 V, I
D
= 4.5 A
N-Ch
0.044
0.055
r
DS(on)
V
GS
= –4.5 V, I
D
= –4.0 A
P-Ch
0.064
0.080
V
GS
= 3.0 V, I
D
= 3.8 A
N-Ch
0.055
0.075
V
GS
= –3.0 V, I
D
= –3.0 A
P-Ch
0.086
0.120
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 4.5 A
N-Ch
11.5
S
V
DS
= –15 V, I
D
= –4.0 A
P-Ch
9.8
Diode Forward Voltage
a
V
SD
I
S
= 1.7 A, V
GS
= 0 V
N-Ch
0.73
1.2
V
I
S
= –1.7 A, V
GS
= 0 V
P-Ch
–0.75
–1.2
Dynamic
b
Total Gate Charge
Q
g
N Ch
N-Channel
N-Ch
5.2
10
= 3 5 V V
= 4 5 V I
= 0 8 A
V
DS
= 3.5 V,
GS
= 4.5 V, I
D
= 0.8 A
P-Ch
7.9
15
Gate-Source Charge
Q
gs
P Ch
P-Channel
N-Ch
0.95
nC
V
DS
= –3.5 V,
V
= –4.5 V
I
D
= –0.8 A
P-Ch
1.60
Gate-Drain Charge
Q
gd
N-Ch
1.15
P-Ch
1.90
Turn-On Delay Time
t
d(on)
N Ch
N-Channel
N-Ch
12
20
P-Ch
20
40
Rise Time
t
r
V
= 3.5 V, R
= 4.3
0.8 A, V
GEN
= 4.5 V, R
G
= 6
N-Ch
22
50
I
D
P-Ch
52
90
Turn-Off Delay Time
d(off)
t
P-Channel
3 5 V R
V
= –3.5 V, R
= 4 3
–0.8 A, V
= –4.5 V, R
= 6
0.8 A, V
GEN
4.5 V, R
G
6
N-Ch
27
50
ns
I
D
P-Ch
37
60
Fall Time
t
f
N-Ch
8
20
P-Ch
11
20
Source-Drain
Reverse Recovery Time
t
rr
N-Channel—I
F
= 1.7 A, di/dt = 100 A/ s
N-Ch
60
100
P-Channel—I
F
= –1.7 A, di/dt = 100 A/ s
P-Ch
60
100
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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