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參數(shù)資料
| 型號(hào)： | Si9910DY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Paired Cable; Number of Conductors:24; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:12; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes |
| 中文描述： | 自適應(yīng)功率MOSFET Driver1 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 51K |
| 代理商： | SI9910DY-T1 |
Si9910
Vishay Siliconix
Document Number: 70009
S-40707—Rev. G, 19-Apr-04
www.vishay.com
1
Adaptive Power MOSFET Driver
1
FEATURES
dv/dt and di/dt Control
Undervoltage Protection
Short-Circuit Protection
t
rr
Shoot-Through Current Limiting
Low Quiescent Current
CMOS Compatible Inputs
Compatible with Wide Range of MOSFET Devices
Bootstrap and Charge Pump Compatible
(High-Side Drive)
DESCRIPTION
The Si9910 Power MOSFET driver provides optimized gate
drive signals, protection circuitry and logic level interface. Very
low quiescent current is provided by a CMOS buffer and a
high-current emitter-follower output stage. This efficiency
allows operation in high-voltage bridge applications with
“bootstrap” or “charge-pump” floating power supply
techniques.
The non-inverting output configuration minimizes current
drain for an n-channel “on” state. The logic input is internally
diode clamped to allow simple pull-down in high-side drives.
Fault protection circuitry senses an undervoltage or output
short-circuit condition and disables the power MOSFET.
Addition of one external resistor limits maximum di/dt of the
external Power MOSFET. A fast feedback circuit may be used
to limit shoot-through current during t
rr
(diode reverse recovery
time) in a bridge configuration.
The Si9910 is available in 8-pin plastic DIP and SOIC
packages, and are specified over the industrial, D suffix (
40
to 85 C) temperature range. In SOIC-8 packaging both
standard and lead (Pb)-free options are available.
FUNCTIONAL BLOCK DIAGRAM
DRAIN
PULL-UP
PULL-DOWN
C1
* Typical Values
V
DD
V
SS
R2
*250
R3
*100 k
V
DS
Undervoltage/
Overcurrent
Protection
*2 to 5 pF
I
SENSE
INPUT
R1
*0.1
2- s
Delay
1. Patent Number 484116.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Si9910DJ | Adaptive Power MOSFET Driver1 |
| Si9910DY | Adaptive Power MOSFET Driver1 |
| SI9910 | Adaptive Power MOSFET Driver1 |
| Si9910DJ-T1 | Adaptive Power MOSFET Driver1 |
| SI9912 | Half-Bridge MOSFET Driver for Switching Power Supplies |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9910DY-T1-E3 | 功能描述:功率驅(qū)動(dòng)器IC MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9912 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Half-Bridge MOSFET Driver for Switching Power Supplies |
| SI9912DB | 功能描述:功率驅(qū)動(dòng)器IC SMD SI9912 Kit RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9912DY | 功能描述:功率驅(qū)動(dòng)器IC Dual MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9912DY-E3 | 功能描述:功率驅(qū)動(dòng)器IC H-Bridge MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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