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參數(shù)資料
| 型號： | SI9912 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Half-Bridge MOSFET Driver for Switching Power Supplies |
| 中文描述： | 半橋MOSFET的開關(guān)電源驅(qū)動器 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 95K |
| 代理商： | SI9912 |
C
BOOT
Q
1
V
DC
OUTPUT
V
DD
IN
Undervoltage
GND
Q
2
+
V
DD
Level Shift
OUT
L
OUT
H
SD
V
BBM
BOOT
D1
V
S
Si9912
Vishay Siliconix
Document Number: 71311
S-40134—Rev. B, 16-Feb-04
www.vishay.com
1
Half-Bridge MOSFET Driver for Switching Power Supplies
FEATURES
APPLICATIONS
4.5- to 5.5-V Operation
Undervoltage Lockout
250-kHz to 1-MHz Switching Frequency
Shutdown Quiescent Current <5 A
One Input PWM Signal Generates Both Drive
Bootstrapped High-Side Drive
Operates from 4.5- to 30-V Supply
TTL/CMOS Compatible Input Levels
1-A Peak Drive Current
Break-Before-Make Circuit
Multiphase Desktop CPU Supplies
Single-Supply Synchronous Buck Converters
Mobile Computing CPU Core Power Converters
Standard-Synchronous Converters
High Frequency Switching Converters
DESCRIPTION
The Si9912 is a dual MOSFET high-speed driver with
break-before-make. It is designed to operate in high frequency
dc-dc switchmode power supplies. The high-side driver is
bootstrapped to handle the high voltage slew rate associated
with “floating” high-side gate drivers. Each driver is capable of
switching a 3000-pF load with 60-ns propogation delay and
25-ns transition time. The Si9912 comes with an internal
break-before-make feature to prevent shoot-through current in
the external MOSFETs. A shutdown pin is used to enable the
driver. When disabled, the quiescent current of the driver is
less than 5 A.
The Si9912 is available in both standard and lead (Pb)-free, 8-pin
SOIC packages for operation over the industrial operation range
(
40 C to 85 C).
FUNCTIONAL BLOCK DIAGRAM
AND TRUTH TABLE
TRUTH TABLE
V
S
L
SD
IN
V
OUTL
L
V
OUTH
L
L
L
L
L
H
L
L
L
H
L
H
L
L
H
H
L
H
H
L
L
L
L
H
L
H
L
L
H
H
L
L
L
H
H
H
L
H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI9912DY | Half-Bridge MOSFET Driver for Switching Power Supplies |
| SI9912DY-T1 | Half-Bridge MOSFET Driver for Switching Power Supplies |
| SI9912DY-T1-E3 | Half-Bridge MOSFET Driver for Switching Power Supplies |
| SI9913 | Dual MOSFET Bootstrapped Driver with Break-Before-Make |
| SI9928DY | Complimentary 20-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9912DB | 功能描述:功率驅(qū)動器IC SMD SI9912 Kit RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9912DY | 功能描述:功率驅(qū)動器IC Dual MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9912DY-E3 | 功能描述:功率驅(qū)動器IC H-Bridge MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9912DY-T1 | 功能描述:功率驅(qū)動器IC Dual MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SI9912DY-T1-E3 | 功能描述:功率驅(qū)動器IC Dual MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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