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參數(shù)資料
| 型號(hào)： | SI7806BDN-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S) Fast Switching MOSFET |
| 中文描述： | N溝道30 V的（副）快速開關(guān)MOSFET |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | SI7806BDN-T1-E3 |
www.vishay.com
2
Document Number: 73081
S-60790-Rev. B, 08-May-06
Vishay Siliconix
Si7806BDN
Notes:
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C unless noted
SPECIFICATIONS
T
J
= 25 °C unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Symbol
Test Conditions
Min
Typ
Max
Unit
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12.6 A
V
GS
= 4.5 V, I
D
= 10.6 A
V
DS
= 15 V, I
D
= 12.6 A
I
S
= 3.2 A, V
GS
= 0 V
1.0
3
V
nA
± 100
1
5
Zero Gate Voltage Drain Current
I
DSS
μA
On-State Drain Current
a
I
D(on)
40
A
Drain-Source On-State Resistance
a
r
DS(on)
0.012
0.017
34
0.77
0.0145
0.0205
Ω
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
V
SD
S
V
1.2
Total Gate Charge
Q
g
Q
gt
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 12.6 A
8.5
19
3.6
3.0
2
8
12
25
10
35
11
24
nC
V
DS
= 15 V, V
GS
= 10 V, I
D
= 12.6 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
f = 10 MHz
Ω
V
DD
= 15 V, R
L
= 15
Ω
I
D
1 A, V
GEN
= 10 V, R
g
= 6
Ω
15
20
40
20
70
ns
I
F
= 3.2 A, di/dt = 100 A/μs
Output Characteristics
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
V
GS
= 10 thr
u
5
V
3
V
V
DS
Drain-to-So
u
rce
V
oltage (
V
)
I
D
)
A
(
e
C
D
4
V
Transfer Characteristics
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
25 °C
T
C
= 125 °C
- 55 °C
V
GS
Gate-to-So
u
rce
V
oltage (
V
)
I
D
)
A
(
e
C
D
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