參數(shù)資料
型號(hào)： SI7856DP
廠商： Vishay Intertechnology,Inc.
英文描述： HF TH 75 Relay
中文描述： N溝道30 V的（副）MOSFET的
文件頁數(shù)： 1/4頁
文件大?。?/td> 50K
代理商： SI7856DP
FEATURES
TrenchFET Power MOSFET
Optimized for “Low Side” Synchronous
Rectifier Operation
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
DC/DC Converters
Synchronous Rectifiers
Si7856DP
Vishay Siliconix
New Product
Document Number: 71850
S-20351—Rev. A, 18-Apr-02
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.0045 @ V
GS
= 10 V
0.0055 @ V
GS
= 4.5 V
25
30
23
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
25
14
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
19
11
Pulsed Drain Current (10 s Pulse Width)
I
DM
60
A
Continuous Source Current (Diode Conduction)
a
I
S
4.5
1.6
T
A
= 25 C
5.4
1.9
Maximum Power Dissipation
a
T
A
= 70 C
P
D
3.4
1.2
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
18
23
Maximum Junction-to-Ambient
a
Steady State
R
thJA
50
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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SI7868ADP Si7868ADP vs. Si7868DP Specification Comparison
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7856DP-T1 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 30V 14A 8-Pin PowerPAK SO T/R
SI7858ADP-T1 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 12V 20A 8-Pin PowerPAK SO T/R
SI7858ADP-T1-E3 功能描述:MOSFET 12V 29A 0.0026Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7858ADP-T1-E3-10 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 12V 20A - Tape and Reel
SI7858ADP-T1-GE3 功能描述:MOSFET 12V 29A 5.4W 2.6mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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