參數(shù)資料
型號： SI7868ADP
廠商： Vishay Intertechnology,Inc.
英文描述： Si7868ADP vs. Si7868DP Specification Comparison
中文描述： Si7868ADP與Si7868DP規(guī)格比較
文件頁數(shù)： 1/1頁
文件大?。?/td> 95K
代理商： SI7868ADP
Specification Comparison
Vishay Siliconix
Document Number 74054
15-Apr-05
www.vishay.com
Si7868ADP vs. Si7868DP
Description:
Package:
Pin Out:
Part Number Replacements:
Si7868ADP-T1-E3 Replaces Si7868DP-T1-E3
Si7868ADP-T1-E3 Replaces Si7868DP-T1
Summary of Performance:
The Si7868ADP is the replacement to the original Si7868DP; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si7868ADP
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
T
A
= 25
°
C
Continuous Drain Current
T
A
= 70
°
C
Pulsed Drain Current
I
DM
Continuous Source Current
(MOSFET Diode Conduction)
Avalanche Current
L = 0.1 mH
I
AS
T
A
= 25
°
C
Power Dissipation
T
A
= 70
°
C
Operating Junction & Storage Temperature Range
T
j
& T
stg
Maximum Junction-to-Ambient
R
thJA
SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
N-Channel, 20-V (D-S) MOSFET
PowerPAK
SO-8
Identical
Si7868DP
20
+16
29
25
Unit
20
+16
35
28
V
I
D
70
4.9
60
4.5
I
S
30
5.4
3.4
50
5.4
3.4
A
P
D
W
-55 to 150
23
-55 to 150
23
°
C
°
C/W
Si7868ADP
Typ
Si7868DP
Typ
Parameter
Symbol
Min
Max
Min
Max
Unit
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS(th)
I
GSS
I
DSS
I
D(on)
0.6
30
1.6
+100
1
0.6
30
1.5
+100
1
V
nA
μ
A
A
V
GS
= 10 V
V
GS
= 10 V
0.0018
0.00225
0.0018
0.00225
Drain-Source On-Resistance
V
GS
= 4.5 V
r
DS(on)
0.0021
0.00275
0.0022
0.00275
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
g
fs
V
SD
150
0.65
95
0.63
S
V
1.1
1.1
Qg
Qgs
Qgd
Rg
46
9.5
8.8
1.1
70
1.7
50
12
11
1.2
75
1.8
nC
0.5
0.5
t
d(on)
28
45
53
80
Turn-On Time*
t
r
120
180
49
75
t
d(off)
52
80
150
240
Turn-Off Time*
t
f
12
20
75
110
Source-Drain Reverse Recovery Time
t
rr
50
75
65
100
ns
* Datasheet test conditions differ;
R
L
= 1
, I
D
= 10 A, Rg = 1
on the Si7868ADP and
R
L
= 10
, I
D
= 1 A, Rg = 6
on the Si7868DP.
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相關代理商/技術參數(shù)
參數(shù)描述
SI7868ADP-T1-E3 功能描述:MOSFET 20V 40A 83W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7868ADP-T1-GE3 功能描述:MOSFET 20V 40A 83W 2.25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7868DP 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Si7868ADP vs. Si7868DP Specification Comparison
SI786CG 功能描述:DC/DC 開關控制器 3.3V Power Sup Cont RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風格: 封裝 / 箱體:CPAK
SI786CG-E3 功能描述:開關變換器、穩(wěn)壓器與控制器 Dual 3.3V Step-Down RoHS:否 制造商:Texas Instruments 輸出電壓:1.2 V to 10 V 輸出電流:300 mA 輸出功率: 輸入電壓:3 V to 17 V 開關頻率:1 MHz 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:WSON-8 封裝:Reel
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