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參數(shù)資料
| 型號： | SI7850DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) Fast Switching MOSFET |
| 中文描述： | N通道60 - V（下局副局長）快速開關(guān)MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 45K |
| 代理商： | SI7850DP |
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
PWM Optimized for Fast Switching
Primary Side Switch for 24-V DC/DC Applications
Secondary Synchronous Rectifier
Si7850DP
Vishay Siliconix
New Product
Document Number: 71625
S-03828—Rev. A, 28-May-01
www.vishay.com
1
N-Channel 60-V (D-S) Fast Switching MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.022 @ V
GS
= 10 V
0.031 @ V
GS
= 4.5 V
10.3
60
8.7
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
60
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
10.3
6.2
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
7.5
4.5
Continuous Source Current
I
S
3.7
1.5
A
Pulsed Drain Current
I
DM
40
Avalanche Current
b
I
AS
15
Single Avalanche Energy
b
E
AS
11
mJ
T
A
= 25 C
4.5
1.8
Maximum Power Dissipation
a
T
A
= 85 C
P
D
2.3
0.9
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
22
28
Maximum Junction-to-Ambient
a
Steady State
R
thJA
58
70
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
2.6
3.3
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Guaranteed by design, not subject to production testing.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7850DP | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 |
| SI7850DP_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) Fast Switching MOSFET |
| SI7850DP-T1 | 功能描述:MOSFET 60V 10.3A 4.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7850DP-T1-E3 | 功能描述:MOSFET 60V 10.3A 4.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7850DP-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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