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參數(shù)資料
| 型號： | SI7850DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) Fast Switching MOSFET |
| 中文描述： | N通道60 - V（下局副局長）快速開關(guān)MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | SI7850DP |
Si7850DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71625
S-03828
—
Rev. A, 28-May-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 60 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 C
20
A
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
40
A
V
GS
= 10
V, I
D
= 10.3 A
0.018
0.022
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 8.7 A
0.025
0.031
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 10.3 A
26
S
Diode Forward Voltage
a
V
SD
I
S
= 3.8 A, V
GS
= 0 V
0.85
1.2
V
Dynamic
b
Total Gate Charge
Q
g
18
27
Gate-Source Charge
Q
gs
V
DS
= 30 V,
V
GS
= 10 V, I
D
= 10.3 A
3.4
nC
Gate-Drain Charge
Q
gd
5.3
Gate-Resistance
R
G
1.4
Turn-On Delay Time
t
d(on)
10
20
Rise Time
t
r
V
1 A, V
GEN
= 10 V, R
G
= 6
= 30 V, R = 30
10
20
Turn-Off Delay Time
t
d(off)
I
D
25
50
ns
Fall Time
t
f
12
24
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3.8 A, di/dt = 100 A/ s
50
80
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
0
8
16
24
32
40
0
1
2
3
4
5
0
8
16
24
32
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 10 thru 5 V
25 C
T
C
= 150 C
4 V
–
55 C
3 V
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
D
V
GS
–
Gate-to-Source Voltage (V)
–
I
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7850DP | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 |
| SI7850DP_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) Fast Switching MOSFET |
| SI7850DP-T1 | 功能描述:MOSFET 60V 10.3A 4.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7850DP-T1-E3 | 功能描述:MOSFET 60V 10.3A 4.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7850DP-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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