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參數(shù)資料
| 型號(hào)： | SI7840BDP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Si7840BDP vs. Si7840DP Specification Comparison |
| 中文描述： | Si7840BDP與Si7840DP規(guī)格比較 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 220K |
| 代理商： | SI7840BDP |
SPICE Device Model Si7840BDP
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73244
04-Dec-04
www.vishay.com
1
N-Channel 30-V (D-S) Fast Switching MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
55 to 125
°
C
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
Click Here & UpgradeUnlimited Pages相關(guān)PDF資料 |
PDF描述 |
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| SI7840DP | N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7844DP | Dual N-Ch MOSFET plus Schottky diode, |
| SI7850DP | N-Channel 60-V (D-S) Fast Switching MOSFET |
| SI7856DP | HF TH 75 Relay |
| SI7858DP | N-Channel 12-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7840BDP-T1-E3 | 功能描述:MOSFET 30V 14A 4.1W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7840BDP-T1-GE3 | 功能描述:MOSFET 30V 16.5A 4.1W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7840DP | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 |
| SI7840DP | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 |
| SI7840DP-T1 | 功能描述:MOSFET 30V 18A 5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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