參數(shù)資料
型號(hào): SI7806BDN-T1-E3
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 30-V (D-S) Fast Switching MOSFET
中文描述: N溝道30 V的(副)快速開關(guān)MOSFET
文件頁數(shù): 1/6頁
文件大小: 113K
代理商: SI7806BDN-T1-E3
Vishay Siliconix
Si7806BDN
New Product
Document Number: 73081
S-60790-Rev. B, 08-May-06
www.vishay.com
1
N-Channel 30-V (D-S) Fast Switching MOSFET
FEATURES
TrenchFET
Power MOSFETS
PWM Optimized
New Low Thermal Resistance PowerPAK
Package with Low 1.07 mm Profile
APPLICATIONS
DC/DC Converters
- Secondary Synchronous Rectifier
- High-Side MOSFET in Synchronous Buck
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
Ω
)
I
D
(A)
30
0.0145 at V
GS
= 10 V
12.6
0.0205 at V
GS
= 4.5 V
10.6
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-
8
Bottom
V
ie
w
Ordering Information: Si7
8
06BD
N
-T1-E3 (Lead (P
b
)-free)
N
-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
10 secs
Steady State
Unit
30
± 20
V
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
T
A
= 70 °C
I
D
12.6
10.1
8.0
6.4
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
40
3.2
3.8
2.0
1.3
1.5
0.8
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
24
65
1.9
Maximum
33
81
2.4
Unit
Maximum Junction-to-Ambient
a
t
10 sec
Steady State
Steady State
R
thJA
°C/W
Maximum Junction-to-Case (Drain)
R
thJC
RoHS
COMPLIANT
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