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參數(shù)資料
| 型號： | SI7116DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 40-V (D-S) Fast Switching MOSFET |
| 中文描述： | N通道40 - V（下局副局長）快速開關(guān)MOSFET |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 78K |
| 代理商： | SI7116DN |
Si7116DN
Vishay Siliconix
Document Number: 73139
S-51412—Rev. C, 01-Aug-05
www.vishay.com
5
10
–3
10
–2
1
10
–1
10
–4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
N
T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg73139
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7116DN-T1-E3 | 功能描述:MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7116DN-T1-GE3 | 功能描述:MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7117DNT1E3 | 制造商:VISHAY 功能描述:Pb Free |
| SI7117DN-T1-E3 | 功能描述:MOSFET 150V 2.17A 12.5W 1.2ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7117DN-T1-GE3 | 功能描述:MOSFET 150V 2.17A 12.5W 1.2ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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