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參數(shù)資料
| 型號： | Si7212DN-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 94K |
| 代理商： | SI7212DN-T1-E3 |
FEATURES
TrenchFET Gen II Power MOSFET
100% R
g
Tested
Space Savings Optimized for Fast
Switching
APPLICATIONS
Synchronous Rectification
Intermediate Driver
RoHS
COMPLIANT
Si7212DN
Vishay Siliconix
Document Number: 73128
S-51128—Rev. B, 13-Jun-05
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
30
0.036 @ V
GS
= 10 V
0.039 @ V
GS
= 4.5 V
6.8
7
6.6
PowerPAK 1212-8
Bottom View
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
3.30 mm
3.30 mm
Ordering Information: Si7212DN-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
G
1
D
1
S
1
N-Channel MOSFET
G
2
D
2
S
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6.8
4.9
T
A
= 85 C
4.9
3.5
A
Pulsed Drain Current
I
DM
20
Continuous Source Current (Diode Conduction)
a
I
S
2.2
1.1
A
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.6
1.3
W
T
A
= 85 C
1.4
0.69
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Soldering Recommendations (Peak Temperature)
b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
38
48
Steady State
77
94
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
4.3
5.4
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Solder Profile (
http://www.vishay.com/doc73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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| SI7403DN | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7212DN-T1-GE3 | 功能描述:MOSFET 30V 6.8A 2.6W 36mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7213-B-00-IV | 功能描述:MANGETIC SENSOR LINEAR SENT 制造商:silicon labs 系列:* 包裝:剪帶 零件狀態(tài):在售 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:SOT-23-3 標(biāo)準(zhǔn)包裝:300 |
| SI7213-B-00-IVR | 功能描述:MANGETIC SENSOR LINEAR SENT 制造商:silicon labs 系列:- 包裝:- 零件狀態(tài):在售 類型:羅盤/磁力計 技術(shù):霍爾效應(yīng) 軸:Z 輸出類型:PWM，SENT 電壓 - 電源:1.71 V ~ 5.5 V 電流 - 電源（最大值）:8.5mA 電流 - 輸出（最大值）:- 分辨率:13 b 帶寬:1kHz 工作溫度:-40°C ~ 125°C（TA） 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:SOT-23-3 標(biāo)準(zhǔn)包裝:1 |
| SI7214-B-00-IV | 功能描述:MANGETIC SENSOR LINEAR PWM 制造商:silicon labs 系列:* 包裝:剪帶 零件狀態(tài):在售 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:SOT-23-3 標(biāo)準(zhǔn)包裝:300 |
| SI7214-B-00-IVR | 功能描述:MANGETIC SENSOR LINEAR PWM 制造商:silicon labs 系列:- 包裝:- 零件狀態(tài):在售 類型:羅盤/磁力計 技術(shù):霍爾效應(yīng) 軸:Z 輸出類型:PWM，SENT 電壓 - 電源:3.3 V ~ 26.5 V 電流 - 電源（最大值）:8.5mA 電流 - 輸出（最大值）:- 分辨率:13 b 帶寬:150Hz 工作溫度:-40°C ~ 125°C（TA） 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:SOT-23-3 標(biāo)準(zhǔn)包裝:1 |
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