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參數(shù)資料
| 型號(hào)： | SI7116DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 40-V (D-S) Fast Switching MOSFET |
| 中文描述： | N通道40 - V（下局副局長(zhǎng)）快速開(kāi)關(guān)MOSFET |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | SI7116DN |
TrenchFET Power MOSFET
New Low Thermal Resistance
PowerPAK Package with Low
1.07-mm Profile
PWM Optimized
100% R
g
Tested
Synchronous Rectification
Intermediate Switch
Synchronous Buck
D
RoHS
Si7116DN
Vishay Siliconix
Document Number: 73139
S-51412—Rev. C, 01-Aug-05
www.vishay.com
1
N-Channel 40-V (D-S) Fast Switching MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
40
0.0078 @ V
GS
= 10 V
0.010 @ V
GS
= 4.5 V
16.4
15
14.5
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7116DN-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
G
S
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 150 C)
a
T
A
= 25 C
I
D
16.4
10.5
T
A
= 70 C
13.1
8.4
Pulsed Drain Current
I
DM
60
A
Continuous Source Current (Diode Conduction)
a
I
S
3.2
1.3
Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
15
Avalanche Energy
E
AS
11
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.8
1.5
W
T
A
= 70 C
2.0
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Soldering Recommendations (Peak Temperature)
b,c
260
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
24
33
Steady State
65
81
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.9
2.4
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Solder Profile (
http://www.vishay.com/doc73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7116DN-T1-E3 | 功能描述:MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7116DN-T1-GE3 | 功能描述:MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7117DNT1E3 | 制造商:VISHAY 功能描述:Pb Free |
| SI7117DN-T1-E3 | 功能描述:MOSFET 150V 2.17A 12.5W 1.2ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7117DN-T1-GE3 | 功能描述:MOSFET 150V 2.17A 12.5W 1.2ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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