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參數(shù)資料
| 型號(hào)： | SI6562DQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N- and P-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | N和P溝道的2.5 V（GS）的MOSFET的 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | SI6562DQ |
Si6562DQ
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70720
S-56944—Rev. B, 23-Nov-98
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.6
V
V
DS
= V
GS
, I
D
= –250 A
P-Ch
–0.6
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
N-Ch
100
nA
P-Ch
100
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 20 V, V
GS
= 0 V
N-Ch
1
A
V
DS
= –20 V, V
GS
= 0 V
P-Ch
–1
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 C
N-Ch
25
V
DS
= –20 V, V
GS
= 0 V, T
J
= 55 C
P-Ch
–25
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
N-Ch
30
A
V
DS
–5 V, V
GS
= –4.5 V
P-Ch
–30
D i S
Drain-Source O S
R
i
a
V
GS
= 4.5 V, I
D
= 4.5 A
N-Ch
0.023
0.030
r
DS(on)
V
GS
= –4.5 V, I
D
= –3.5 A
P-Ch
0.040
0.050
V
GS
= 2.5 V, I
D
= 3.9 A
N-Ch
0.030
0.040
V
GS
= –2.5 V, I
D
= –2.7 A
P-Ch
0.060
0.085
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 4.5 A
N-Ch
20
S
V
DS
= –10 V, I
D
= –3.5 A
P-Ch
10
Diode Forward Voltage
a
V
SD
I
S
= 1.25 A, V
GS
= 0 V
N-Ch
0.65
1.2
V
I
S
= –1.25 A, V
GS
= 0 V
P-Ch
0.72
–1.2
Dynamic
b
Total Gate Charge
Q
g
N Ch
N-Channel
N Channel
N-Ch
13
25
P-Ch
14.5
25
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 4.5 A
N-Ch
3.0
nC
P-Channel
V
DS
= –15 V V
V
GS
= –4.5 V, I
D
= –3.5 A
4 5 V I
3 5 A
P-Ch
3.5
Gate-Drain Charge
Q
gd
N-Ch
3.3
P-Ch
3.5
Turn-On Delay Time
t
d(on)
N Ch
N-Channel
N-Ch
22
50
P-Ch
27
50
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 10 V, R
G
= 6
N-Ch
40
80
I
D
P-Ch
30
60
Turn-Off Delay Time
t
d(off)
P-Channel
10 V R
V
= –10 V, R
= 10
–1 A, V
= –10 V, R
= 6
1 A, V
GEN
10 V, R
G
6
N-Ch
50
100
ns
I
D
P-Ch
57
100
Fall Time
t
f
N-Ch
20
40
P-Ch
21
40
Source-Drain
Reverse Recovery Time
t
rr
I
F
= 1.25 A, di/dt = 100 A/ s
N-Ch
30
60
I
F
= –1.25 A, di/dt = 100 A/ s
P-Ch
60
100
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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