- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368618 > SI6801DQ (Vishay Intertechnology,Inc.) SPICE Device Model Si6801DQ PDF資料下載
參數(shù)資料
| 型號： | SI6801DQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | SPICE Device Model Si6801DQ |
| 中文描述： | 器件的SPICE模型Si6801DQ |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 302K |
| 代理商： | SI6801DQ |
SPICE Device Model Si6801DQ
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 71023
22-May-04
www.vishay.com
1
N- and P-Channel Dual Enhancement-Mode MOSFET
CHARACTERISTICS
N- and P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n- and p-channel vertical DMOS. The model
subcircuit
is
extracted
55 to 125
°
C temperature ranges under the pulsed 0 to 5V gate
drive. The saturated output impedance is best fit at the gate bias
near the threshold voltage.
and
optimized
over
the
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
a
Click Here & UpgradeUnlimited Pages相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI6802DQ | N-Channel, Reduced Qg, Fast Switching MOSFET |
| Si6820DQ | N-Channel, Reduced Qg, MOSFET with Schottky Diode |
| SI6821DQ | P-Channel, Reduced Qg, MOSFET with Schottky Diode |
| SI6876EDQ | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI6880AEDQ | Specification Comparison |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI6801DQ-T1 | 功能描述:MOSFET 20V 1.9/1.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6802DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel, Reduced Qg, Fast Switching MOSFET |
| SI6802DQ-T1 | 功能描述:MOSFET 20V 3.3A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6803DQ-T1 | 功能描述:MOSFET 20V 2.5/2.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI680M100 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:SNAP-IN MOUNT ALUMINUM ELECTROLYTIC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。