參數(shù)資料
型號： SI6801DQ
廠商： Vishay Intertechnology,Inc.
英文描述： SPICE Device Model Si6801DQ
中文描述： 器件的SPICE模型Si6801DQ
文件頁數(shù)： 2/4頁
文件大?。?/td> 302K
代理商： SI6801DQ
Vishay Siliconix
www.vishay.com
2
Document Number: 71023
22-May-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Typical
Unit
Static
V
DS
= V, V
GS
, I
D
= 250
μ
A
N-Ch
1.02
Gate Threshold Voltage
V
GS(th)
V
DS
= V, V
GS
, I
D
=
250
μ
A
P-Ch
1.15
V
V
DS
5 V, V
GS
= 4.5 V
N-Ch
23
On-State Drain Current
a
I
D(on)
V
DS
=
5 V, V
GS
=
4.5 V
P-Ch
18
A
V
GS
= 4.5 V, I
D
= 1.9 A
N-Ch
0.112
V
GS
=
4.5 V, I
D
=
1.7 A
P-Ch
0.154
V
GS
= 3 V, I
D
= 1.5 A
N-Ch
0.149
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
3 V, I
D
=
1.3 A
P-Ch
0.217
V
DS
= 15 V, I
D
= 1.9 A
N-Ch
5
Forward Transconductance
a
g
fs
V
DS
=
15 V, I
D
=
1.7 A
P-Ch
4.1
S
I
S
= 1 A, V
GS
= 0 V
N-Ch
0.77
Diode Forward Voltage
a
V
SD
I
S
=
1 V, V
GS
= 0 V
P-Ch
0.77
V
Dynamic
b
N-Ch
1.6
Total Gate Charge
Q
g
P-Ch
3
N-Ch
0.41
Gate-Source Charge
Q
gs
P-Ch
0.76
N-Ch
0.26
Gate-Drain Charge
Q
gd
N-Channel
V
DS
= 3.5 V, V
GS
= 4.5 V, I
D
= 0.3 A
P-Channel
V
DS
=
3.5 V, V
GS
=
4.5 V, I
D
=
0.3 A
P-Ch
0.70
nC
N-Ch
5.2
Turn-On Delay Time
t
d(on)
P-Ch
6
N-Ch
6.2
Rise Time
t
r
P-Ch
10
N-Ch
9
Turn-Off Delay Time
t
d(off)
P-Ch
11
N-Ch
15
Fall Time
t
f
N-Channel
V
DD
= 3.5 V, R
L
= 11.5
I
D
0.3 A, V
GEN
= 4.5 V, R
G
= 6
P-Channel
V
DD
=
3.5 V, R
L
= 11.5
I
D
0.3 A, V
GEN
=
4.5 V, R
G
= 6
P-Ch
22
I
F
= 1 A, di/dt = 100 A/
μ
s
N-Ch
31
Source-Drain Reverse Recovery Time
t
rr
I
F
=
1 A, di/dt = 100 A/
μ
s
P-Ch
30
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
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