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參數(shù)資料
| 型號(hào)： | SI6876EDQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 49K |
| 代理商： | SI6876EDQ |
FEATURES
TrenchFET Power MOSFET
Ultra-Low r
SS(on)
4-kV ESD Protection
APPLICATIONS
Battery Protection Circuitry
- 1-2 Cell Li+/LiP
Si6876EDQ
Vishay Siliconix
New Product
Document Number: 71822
S-20802—Rev. B, 01-Jul-02
www.vishay.com
1
Bi-Directional N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
S1S2
(V)
r
S1S2(on)
(
)
I
S1S2
(A)
0.025 @ V
GS
= 10 V
6.2
30
0.030 @ V
GS
= 4.5 V
5.7
0.050 @ V
GS
= 2.5 V
4.5
Si6876EDQ
S
1
S
1
S
1
G
1
1
2
3
4
8
7
6
5
S
2
S
2
S
2
G
2
TSSOP-8
Top View
G
2
S
2
G
1
S
1
N-Channel
R
R
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Source1—Source2 Voltage
V
S1S2
T
30
V
Gate-Source Voltage
V
GS
12
Continuous Source1—Source2 Current
(T
J
= 150 C)
a
T
A
= 25 C
I
S1S2
6.2
5.0
T
A
= 70 C
5.0
4.0
A
Pulsed Source1-Source2 Current
I
SM
30
Maximum Power Dissipation
a
T
A
= 25 C
P
D
1.78
1.19
W
T
A
= 70 C
1.14
0.76
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec.
R
thJA
55
70
Steady State
85
105
C/W
Maximum Junction-to-Foot (Source)
a
Steady State
R
thJF
35
45
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec.
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