參數(shù)資料
型號: SI6911DQ
廠商: Vishay Intertechnology,Inc.
英文描述: Dual P-Channel 12-V (D-S) MOSFET
中文描述: 雙P溝道12 V的(副)MOSFET的
文件頁數(shù): 1/5頁
文件大小: 43K
代理商: SI6911DQ
FEATURES
TrenchFET Power MOSFETS
APPLICATIONS
Load Switch
Battery Switch
Si6911DQ
Vishay Siliconix
New Product
Document Number: 72231
S-31064—Rev. A, 26-May-03
www.vishay.com
1
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.026 @ V
GS
= -4.5 V
-5.1
-12
0.035 @ V
GS
= -2.5 V
-4.5
0.046 @ V
GS
= -1.8 V
-3.9
D
1
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
2
S
2
S
2
G
2
TSSOP-8
Top View
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Ordering Information:
Si6911DQ T-1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-12
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-5.1
-4.3
T
A
= 70 C
-4.1
-3.5
A
Pulsed Drain Current (10 s Pulse Width)
I
DM
-30
Continuous Source Current (Diode Conduction)
a
I
S
-1.0
-0.7
Maximum Power Dissipation
a
T
A
= 25 C
P
D
1.14
0.83
W
T
A
= 70 C
0.73
0.53
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
86
110
Steady State
124
150
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
59
75
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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