參數(shù)資料
型號(hào): SI4884BDY
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述: 雙N溝道30 V的(副)MOSFET的肖特基二極管
文件頁(yè)數(shù): 7/7頁(yè)
文件大?。?/td> 128K
代理商: SI4884BDY
Legal Disclaimer Notice
Vishay
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
相關(guān)PDF資料
PDF描述
SI4884BDY-T1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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SI4890DY N-Channel Reduced Qg; Fast-Switching MOSFET
SI4892DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4884BDY-T1 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI4884BDY-T1-E3 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884BDY-T1-GE3 功能描述:MOSFET 30V 16.5A 4.45W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884DY 功能描述:MOSFET SO8 NCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884DY 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO