參數(shù)資料
型號： SI4884BDY-T1
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁數(shù)： 1/7頁
文件大?。?/td> 128K
代理商： SI4884BDY-T1
TrenchFET Power MOSFET
PWM Optimized
RoHS
Si4884BDY
Vishay Siliconix
New Product
Document Number: 73454
S–51450—Rev. A, 01-Aug-05
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
a
Q
g
(Typ)
30
0.0090 @ V
GS
= 10 V
0.012 @ V
GS
= 4.5 V
16.5
10 5 nC
10.5 nC
13.2
N-Channel MOSFET
G
D
S
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4884BDY-T1—E3 (Lead (Pb)-free)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
GS
30
V
Gate-Source Voltage
20
T
C
= 25 C
T
C
= 70 C
T
A
= 25 C
T
A
= 70 C
16.5
13.2
12.4
b, c
10.0
b, c
50
4.0
2.3
b, c
4.45
2.85
2.50
b, c
1.6
b, c
J
Continuous Drain Current (T
(T
= 150 C)
I
D
A
Pulsed Drain Current
I
DM
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
T
C
= 25 C
T
A
= 25 C
T
C
= 25 C
T
C
= 70 C
T
A
= 25 C
T
A
= 70 C
I
S
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
t
10 sec
R
thJA
40
50
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
22
28
Notes:
a.
b.
c.
d.
Based on T
= 25 C.
Surface mounted on 1” x 1” FR4 board.
t = 10 sec
Maximum under steady state conditions is 85 C/W.
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相關代理商/技術參數(shù)
參數(shù)描述
SI4884BDY-T1-E3 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884BDY-T1-GE3 功能描述:MOSFET 30V 16.5A 4.45W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884DY 功能描述:MOSFET SO8 NCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884DY 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
SI4884DY-E3 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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