參數(shù)資料
型號(hào)： SI4884BDY
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 128K
代理商： SI4884BDY
Si4884BDY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73454
S–51450—Rev. A, 01-Aug-05
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 A
30
V
V
DS
Temperature Coefficient
V
DS
/T
J
I
D
= 250 A
30
mV/ C
V
GS(th)
Temperature Coefficient
V
GS(th)
/T
J
6
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3
V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
10
On-State Drain Current
a
I
D(on)
V
DS
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 10 A
0.007
0.0090
V
GS
= 4.5 V, I
D
= 8 A
0.0095
0.012
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 10 A
45
S
Dynamic
b
Input Capacitance
C
iss
1525
Output Capacitance
C
oss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
295
pF
Reverse Transfer Capacitance
C
rss
120
Total Gate Charge
Q
g
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 12 A
23.5
35
10.5
17
nC
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
=
12 A
4.3
Gate-Drain Charge
Q
gd
3
Gate Resistance
R
g
f = 1 MHz
1.4
2.2
Turn-On Delay Time
t
d(on)
18
30
Rise Time
t
r
V
DD
= 15 V, R
L
= 1.5
10 A, V
GEN
= 4.5 V, R
g
= 1
160
240
Turn-Off Delay Time
t
d(off)
I
D
18
30
Fall Time
t
f
8
15
ns
Turn-On Delay Time
t
d(on)
8
15
Rise Time
t
r
V
= 15 V, R
= 1.5
10 A, V
GEN
= 10 V, R
g
= 1
11
18
Turn-Off Delay Time
t
d(off)
I
D
22
35
Fall Time
t
f
8
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 C
4
A
Pulse Diode Forward Current
a
I
SM
50
Body Diode Voltage
V
SD
I
S
= 2.3 A
0.75
1.1
V
Body Diode Reverse Recovery Time
t
rr
25
40
ns
Body Diode Reverse Recovery Charge
Q
rr
= 9 5 A di/dt = 100 A/ s T
I
F
= 9.5 A, di/dt = 100 A/ s, T
J
= 25 C
15
25
nC
Reverse Recovery Fall Time
t
a
13
ns
Reverse Recovery Rise Time
t
b
12
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4884BDY-T1 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI4884BDY-T1-E3 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884BDY-T1-GE3 功能描述:MOSFET 30V 16.5A 4.45W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884DY 功能描述:MOSFET SO8 NCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884DY 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
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