參數(shù)資料
型號(hào): SI4884BDY
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述: 雙N溝道30 V的(副)MOSFET的肖特基二極管
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 128K
代理商: SI4884BDY
Si4884BDY
Vishay Siliconix
New Product
Document Number: 73454
S–51450—Rev. A, 01-Aug-05
www.vishay.com
3
25 C
0.004
0.006
0.008
0.010
0.012
0.014
0
10
20
30
40
50
0
2
4
6
8
10
0
5
10
15
20
25
0.6
0.8
1.0
1.2
1.4
1.6
–50
–25
0
25
50
75
100
125
150
0
400
800
1200
1600
2000
0
6
12
18
24
30
C
rss
C
oss
C
iss
I
D
= 12 A
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current and Gate Voltage
Q
g
– Total Gate Charge (nC)
V
DS
– Drain-to-Source Voltage (V)
C
V
G
I
D
– Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
– Junction Temperature ( C)
V
GS
= 4.5 V
r
D
(
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.0
1.4
1.8
2.2
2.6
3.0
0
10
20
30
40
50
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 thru 4 V
T
C
= 125 C
–55 C
3 V
Output Characteristics
Transfer Characteristics
V
DS
– Drain-to-Source Voltage (V)
I
D
V
GS
– Gate-to-Source Voltage (V)
I
D
r
D
V
DS
= 10 V
I
D
= 10 A
V
DS
= 20 V
V
DS
= 15 V
相關(guān)PDF資料
PDF描述
SI4884BDY-T1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si4888DY N-Channel Reduced Qg, Fast-Switching MOSFET
SI4890DY N-Channel Reduced Qg; Fast-Switching MOSFET
SI4892DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si4894DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4884BDY-T1 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI4884BDY-T1-E3 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884BDY-T1-GE3 功能描述:MOSFET 30V 16.5A 4.45W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884DY 功能描述:MOSFET SO8 NCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4884DY 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO