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參數資料
| 型號： | SI3012 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT |
| 中文描述： | 3.3伏催化裂化/ JATE直接訪問安排 |
| 文件頁數： | 17/64頁 |
| 文件大小： | 1740K |
| 代理商： | SI3012 |
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Si3038
Rev. 2.01
17
Bill of Materials
Table 16. Global Component Values—Si3038 Chipset
Component
1
C1,C4
Value
Supplier(s)
150 pF, 3 kV, X7R,±20%
Not Installed
0.22
μ
F, 16 V, X7R,±20%
0.1 μF, 50 V, Elec/Tant, ±20%
0.1 μF, 16 V, X7R, ±20%
560 pF, 250 V, X7R, ±20%
10 nF, 250 V, X7R, ±20%
0.22 μF, 16 V, Tant, ±20%
0.47 μF, 16 V, X7R, ±20%
0.68 μF, 16 V, X7R/Elec/Tant, ±20%
3.9 nF, 16 V, X7R, ±20%
0.01 μF, 16 V, X7R, ±20%
1800 pF, 50 V, X7R, ±20%
1000 pF, 3 kV, X7R, ±10%
Not Installed
Novacap, Venkel, Johanson, Murata, Panasonic
C2,C11,C23,C28,C29,C31,C32
C3
C5
C6,C10,C16
C7,C8
C9
C12
C13
C14
C18,C19
C20
C22
C24,C25
2
C30
3
C34,C35
4
D1,D2
5
D3,D4
FB1,FB2
L1,L2
6
Q1,Q3
Q2
Q4
7
RV1
RV2
8
R1,R4,R21,R22,R23
R2
R3
R5
R6
R7,R8,R15,R16,R17,R19
9
R9,R10
R11
R12
R13
R18
R24
R27,R28
R29
R30
U1
U2
Y1
4
Z1
Z4,Z5
Notes:
1.
The following reference designators were intentionally omitted: C15, C17, C21, C26, C27, C31–C33, R14, and R20.
2.
Y2 class capacitors are needed for the Nordic requirements of EN60950 and may also be used to achieve surge performance of 5 kV or better.
3.
Install only if needed for improved radiated emissions performance (10 pF, 16 V, NPO, ±10%).
4.
Y1, C34, and C35 should be installed if the Si3024 is configured as a primary device.
5.
Several diode bridge configurations are acceptable (suppliers include General Semi., Diodes Inc.)
6.
See Appendix B for additional considerations.
7.
Q4 may require copper on board to meet 1/2 W power requirement. (Contact transistor manufacturer for details.)
8.
RV2 can be installed to improve performance from 2500 V to 3500 V for multiple longitudinal surges (270 V, MOV).
9.
The R7, R8, R15 and R16, R17, R19 resistors may each be replaced with a single resistor of 1.62 k
, 3/4 W, ±1%.
Novacap, Venkel, Johanson, Murata, Panasonic
Novacap, Johanson, Murata, Panasonic
33 pF, 16 V, NPO, ±5%
Dual Diode, 300 V, 225 mA
BAV99 Dual Diode, 70 V, 350 mW
Ferrite Bead
330 mH, 120 mA, DCR <3
, ±10%
A42, NPN, 300 V
A92, PNP, 300 V
BCP56T1, NPN, 60 V, 1/2 W
Sidactor, 275 V, 100 A
Not Installed
Not Installed
402
, 1/16 W, ±1%
Not Installed
36 k
, 1/16 W, ±5%
120 k
, 1/16 W, ±5%
4.87 k
, 1/4 W, ±1%
56 k
, 1/10 W, ±5%
10 k
, 1/16 W, ±1%
78.7
, 1/16 W, ±1%
215
, 1/16 W, ±1%
2.2 k
, 1/10 W, ±5%
150
, 1/16 W, ±5%
10
, 1/10 W, ±5%
Not Installed
0
, 1/10 W
Si3024
Si3014
24.576 MHz, 18 pF, 50 ppm
Zener Diode, 43 V, 1/2 W
Zener Diode, 5.6 V, 1/2 W
Central Semiconductor
Diodes Inc., OnSemiconductor, Fairchild
Murata
Toko
OnSemiconductor, Fairchild
OnSemiconductor, Fairchild
OnSemiconductor, Fairchild
Teccor, ST Microelectronics, Microsemi, TI
Silicon Labs
Silicon Labs
Vishay, OnSemiconductor, Rohm
Diodes Inc., OnSemiconductor, Fairchild
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