參數(shù)資料
型號: S71WS512NE0BFWZZ3
廠商: SPANSION LLC
元件分類: 存儲器
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA96
封裝: 9 X 12 MM, LEAD FREE, FBGA-96
文件頁數(shù): 141/142頁
文件大?。?/td> 1996K
代理商: S71WS512NE0BFWZZ3
June 28, 2004 S71WS512NE0BFWZZ_00_A1
128Mb pSRAM
141
P r e l i m i n a r y
TIMING DIAGRAMS (Continued)
Configuration Register Set Timing #2 (Synchronous Operation)
Notes
*1: The all address inputs must be High from Cycle #1 to #5.
*2: The address key must confirm the format specified in FUNCTIONAL DESCRIPTION. If not, the operation
and data are not guaranteed.
*3: After t
TRB
following Cycle #6, the Configuration Register Set is completed and returned to the normal
operation.
ADDRESS
ADV#
DQ
WE#
OE#
LB#, UB#
CLK
CE#1
RDa
MSB
RDa
MSB
RDa
MSB
X
MSB
X
MSB
RDb
Key
t
RCB
t
WCB
t
WCB
t
WCB
t
WCB
t
RCB
t
TRB
t
TRB
t
TRB
t
TRB
t
TRB
Cycle#1
Cycle#2
Cycle#3
Cycle#4
Cycle#5
Cycle#6
t
TRB
RL
RL-1
RL-1
RL-1
RL-1
RL
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S71WS512NA0BFEZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
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S71WS512NA0BFIZZ0 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512NA0BFIZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
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