參數(shù)資料
型號: S71WS512NA0BFWZZ2
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和移動存儲芯片的CMOS 1.8伏特
文件頁數(shù): 118/142頁
文件大?。?/td> 1996K
代理商: S71WS512NA0BFWZZ2
118
128Mb pSRAM
S71WS512NE0BFWZZ_00_A1 June 28, 2004
P r e l i m i n a r y
TIMING DIAGRAMS (Continued)
Asynchronous Read Timing #2 (OE# & Address Access)
Notes:
This timing diagram assumes CE2=H, ADV#=L and WE#=H.
Asynchronous Read Timing #3 (LB# / UB# Byte Access)
Note:
This timing diagram assumes CE2=H, ADV#=L and WE#=H.
t
AA
VALID DATA OUTPUT
ADDRESS
CE#1
DQ
(Output)
LB# / UB#
t
OHZ
t
OE
t
RC
t
OLZ
ADDRESS VALID
VALID DATA OUTPUT
ADDRESS VALID
t
RC
t
OH
t
OH
OE#
t
Ax
Low
t
AA
t
OHAH
t
ASO
t
AA
VALID DATA
OUTPUT
ADDRESS
CE#1,
DQ0-7
(Output)
UB#
t
BHZ
t
OH
t
BA
t
RC
t
BLZ
ADDRESS VALID
VALID DATA
OUTPUT
t
BHZ
t
OH
LB#
t
AX
Low
t
BA
t
Ax
DQ8-15
(Output)
t
BLZ
t
BA
t
BLZ
t
BHZ
t
OH
VALID DATA OUTPUT
相關(guān)PDF資料
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S71WS512N80BAEZZ0 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAEZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAEZZ3 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAIZZ0 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAIZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
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