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參數資料
| 型號： | S71WS512N80BAEZZ2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| 中文描述： | 堆疊式多芯片產品（MCP）的閃存和移動存儲芯片的CMOS 1.8伏特 |
| 文件頁數： | 40/142頁 |
| 文件大?。?/td> | 1996K |
| 代理商： | S71WS512N80BAEZZ2 |
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40
S29WSxxxN MirrorBit Flash Family For Multi-chip Products (MCP)
S71WS512NE0BFWZZ_00_ A1 June 28, 2004
A d v a n c e I n f o r m a t i o n
4Bh
0001h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page, 04 = 16 Word Page
4Dh
0085h
ACC (Acceleration) Supply Minimum
00h = Not Supported, DQ7-DQ4: Volt, DQ3-DQ0: 100 mV
4Eh
0095h
ACC (Acceleration) Supply Maximum
00h = Not Supported, DQ7-DQ4: Volt, DQ3-DQ0: 100 mV
4Fh
0001h
Top/Bottom Boot Sector Flag
0001h = Dual Boot Device
50h
0001h
Program Suspend. 00h = not supported
51h
0001h
Unlock Bypass
00 = Not Supported, 01=Supported
52h
0007h
SecSi Sector (Customer OTP Area) Size 2
N
bytes
53h
0014h
Hardware Reset Low Time-out during an embedded algorithm to read mode
Maximum 2
N
ns
54h
0014h
Hardware Reset Low Time-out not during an embedded algorithm to read mode
Maximum 2
N
ns
55h
0005h
Erase Suspend Time-out Maximum 2
N
ns
56h
0005h
Program Suspend Time-out Maximum 2
N
ns
57h
0010h
Bank Organization: X = Number of banks
58h
0013h (WS256N)
Bank 0 Region Information. X = Number of sectors in bank
59h
0010h (WS256N)
Bank 1 Region Information. X = Number of sectors in bank
5Ah
0010h (WS256N)
Bank 2 Region Information. X = Number of sectors in bank
5Bh
0010h (WS256N)
Bank 3 Region Information. X = Number of sectors in bank
5Ch
0010h (WS256N)
Bank 4 Region Information. X = Number of sectors in bank
5Dh
0010h (WS256N)
Bank 5 Region Information. X = Number of sectors in bank
5Eh
0010h (WS256N)
Bank 6 Region Information. X = Number of sectors in bank
5Fh
0010h (WS256N)
Bank 7 Region Information. X = Number of sectors in bank
60h
0010h (WS256N)
Bank 8 Region Information. X = Number of sectors in bank
61h
0010h (WS256N)
Bank 9 Region Information. X = Number of sectors in bank
62h
0010h (WS256N)
Bank 10 Region Information. X = Number of sectors in bank
63h
0010h (WS256N)
Bank 11 Region Information. X = Number of sectors in bank
64h
0010h (WS256N)
Bank 12 Region Information. X = Number of sectors in bank
65h
0010h (WS256N)
Bank 13 Region Information. X = Number of sectors in bank
66h
0010h (WS256N)
Bank 14 Region Information. X = Number of sectors in bank
67h
0013h (WS256N)
Bank 15 Region Information. X = Number of sectors in bank
Table 11. Primary Vendor-Specific Extended Query (Continued)
Addresses
Data
Description
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PDF描述 |
|---|---|
| S71WS512N80BAEZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ0 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ2 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ0 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S71WS512N80BAEZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
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