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| 型號(hào)： | S71PL129JC0BFW9Z2 |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA64 |
| 封裝： | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64 |
| 文件頁(yè)數(shù)： | 136/153頁(yè) |
| 文件大?。?/td> | 3651K |
| 代理商： | S71PL129JC0BFW9Z2 |
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October 28, 2005 S71PL129Jxx_00_A8
S71PL129JC0/S71PL129JB0/S71PL129JA0
81
Advance
Informatio n
Functional Description
Legend:L = Low-level Input (VIL), H = High-level Input (VIH), X = VIL or VIH, High-Z = High Impedance.
Absolute Maximum Ratings
Note: ESD Immunity: Spansion Flash memory Multi-Chip Products (MCPs) may contain component devices that are
developed by Spansion and component devices that are developed by a third party (third-party components). Spansion
components are tested and guaranteed to the ESD immunity levels listed in the corresponding Spansion Flash memory
Qualification Database. Third-party components are neither tested nor guaranteed by Spansion for ESD immunity. How-
ever, ESD test results for third-party components may be available from the component manufacturer. Component man-
ufacturer contact information is listed in the Spansion MCP Qualification Report, when available. The Spansion Flash
memory Qualification Database and Spansion MCP Qualification Report are available from Spansion sales offices.
DC Recommended Operating Conditions (Ta = -40°C to 85°C)
Note: VIH (Max) VDD = 1.0 V with 10 ns pulse width. VIL (Min) -1.0 V with 10 ns pulse width.
Mode
CE1#
CE2
OE#
WE#
LB#
UB#
Address
I/O1-8
I/O9-16
Power
Read (Word)
L
H
L
H
L
X
DOUT
IDDO
Read (Lower Byte)
L
H
L
H
L
H
X
DOUT
High-Z
IDDO
Read (Upper Byte)
L
H
L
H
L
X
High-Z
DOUT
IDDO
Write (Word)
L
H
X
L
X
DIN
IDDO
Write (Lower Byte)
L
H
X
L
H
X
DIN
Invalid
IDDO
Write (Upper Byte)
L
H
X
L
H
L
X
Invalid
DIN
IDDO
Outputs Disabled
L
H
X
High-Z
IDDO
Standby
H
X
High-Z
IDDO
Deep Power-down Standby
H
L
X
High-Z
IDDSD
Symbol
Rating
Value
Unit
VDD
Power Supply Voltage
-1.0 to 3.6
V
VIN
Input Voltage
-1.0 to 3.6
V
VOUT
Output Voltage
-1.0 to 3.6
V
Topr
Operating Temperature
-40 to 85
°C
Tstrg
Storage Temperature
-55 to 150
°C
PD
Power Dissipation
0.6
W
IOUT
Short Circuit Output Current
50
mA
Symbol
Parameter
Min
Typ
Max
Unit
VDD
Power Supply Voltage
2.6
2.75
3.3
V
VIH
Input High Voltage
2.0
—
VDD + 0.3 (Note)
VIL
Input Low Voltage
-0.3 (Note)
—
0.4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| S71PL129JC0BFW9Z3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory |
| S71PL129N | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128兆位(16/8/8米x16位元)的CMOS 3.0電壓只有同時(shí)讀/寫(xiě),頁(yè)面模式閃存 |
| S71PL129NB0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit MCPs |
| S71PL129NB0HAW5B0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit MCPs |
| S71PL129NB0HAW5B2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit MCPs |
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