參數(shù)資料
型號(hào): S70WS512N00BFWAB3
廠商: Spansion Inc.
英文描述: Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述: 同硅晶片堆疊多芯片產(chǎn)品(MCP)的512兆位(32兆× 16位)的CMOS 1.8伏,只有同時(shí)讀/寫,突發(fā)模式閃存
文件頁(yè)數(shù): 58/93頁(yè)
文件大?。?/td> 846K
代理商: S70WS512N00BFWAB3
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
59
A d v a n c e I n f o r m a t i o n
The command register and all internal program/erase circuits are disabled, and the device resets
to reading array data. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system
must provide the proper signals to the control inputs to prevent unintentional writes when V
CC
is
greater than V
LKO
.
9.7.4
W rite Pulse Glitch Protection
Noise pulses of less than 3 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
9.7.5
Pow er-Up W rite I nhibit
If WE# = CE# = RESET# = V
IL
and OE# = V
IH
during power up, the device does not accept com-
mands on the rising edge of WE#. The internal state machine is automatically reset to the read
mode on power-up.
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