參數(shù)資料
型號(hào)： S29PL129J
廠商： Spansion Inc.
英文描述： CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： 3.0伏的CMOS只，同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶
文件頁數(shù)： 90/106頁
文件大小： 1997K
代理商： S29PL129J
88
S29PL127J/S29PL129J/S29PL064J/S29PL032J
31107A62 April 7, 2005
P R E L I M I N A R Y
Erase/Program Operations
Notes:
1. Not 100% tested.
2. S29PL129J - During CE1# transitions, CE2# = V
IH
; During CE2# transitions, CE1# = V
IH
3. S29PL129J - There are two CE# (CE1#, CE2#).
4. See the “Erase And Programming Performance” section for more information.
Table 29.
Erase and Program Operations
Parameter
Speed Options
JEDEC
Std
Description
55
60
65
70
Unit
t
AVAV
t
WC
Write Cycle Time (
Note 1
)
Min
55
60
65
70
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
30
35
ns
t
AHT
Address Hold Time From CE# (CE1#, CE#2 in PL129J)
or OE# high during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
25
30
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
10
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# (CE1# or CE#2 in PL129J) Setup Time
Min
0
ns
t
WHEH
t
CH
CE# (CE1# or CE#2 in PL129J) Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
20
25
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (
Note 4
)
Typ
6
μs
t
WHWH1
t
WHWH1
Accelerated Programming Operation (
Note 4
)
Typ
4
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (
Note 4
)
Typ
0.5
sec
t
VCS
V
CC
Setup Time (
Note 1
)
Min
50
μs
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Max
90
ns
Min
35
ns
相關(guān)PDF資料
PDF描述
S29PL064J CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J55 CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J60 CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J65 CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL129N 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FAI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FAI002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FAI003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FAIW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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