參數(shù)資料
型號： S29PL129J
廠商： Spansion Inc.
英文描述： CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： 3.0伏的CMOS只，同步讀/寫閃存與增強VersatileIO控制記憶
文件頁數(shù)： 79/106頁
文件大?。?/td> 1997K
代理商： S29PL129J
April 7, 200531107A62
S29PL127J/S29PL129J/S29PL064J/S29PL032J
77
P R E L I M I N A R Y
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular
sector is actively erasing (that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit II is valid after the rising
edge of the final WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have
been selected for erasure. (The system may use either OE# or CE# (CE1# / CE2#
for PL129J)
to control the read cycles.) But DQ2 cannot distinguish whether the
sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates
whether the device is actively erasing, or is in Erase Suspend, but cannot distin-
guish which sectors are selected for erasure. Thus, both status bits are required
for sector and mode information. Refer to
Table 23
to compare outputs for DQ2
and DQ6.
Figure 7
shows the toggle bit algorithm in flowchart form, and the "
DQ2: Toggle
Bit II
" section explains the algorithm. See also the "
DQ6: Toggle Bit I
" section.
Figure 19
shows the toggle bit timing diagram.
Figure 20
shows the differences
between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to
Figure 7
for the following discussion. Whenever the system initially be-
gins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
Note:
The system should recheck the toggle bit even if DQ5 = “1” because the toggle
bit may stop toggling as DQ5 changes to “1.” See the "
DQ6: Toggle Bit I
" section and
"
DQ2: Toggle Bit II
" section for more information.
Figure 7.
Toggle Bit Algorithm
START
No
Yes
Yes
DQ5 = 1
No
Yes
Toggle Bit
= Toggle
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Toggle Bit
= Toggle
Read Byte Twice
(DQ7–DQ0)
Address = VA
Read Byte
(DQ7–DQ0)
Address =VA
Read Byte
(DQ7–DQ0)
Address =VA
相關(guān)PDF資料
PDF描述
S29PL064J CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J55 CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J60 CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J65 CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL129N 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FAI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FAI002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FAI003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FAIW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*