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參數(shù)資料
| 型號： | S29PL129J |
| 廠商： | Spansion Inc. |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 3.0伏的CMOS只，同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁數(shù)： | 3/106頁 |
| 文件大?。?/td> | 1997K |
| 代理商： | S29PL129J |
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Publication Number
31107
Revision
A
Amendment
62
Issue Date
April 7, 2005
PRELIMINARY
S29PL127J/S29PL129J/S29PL064J/S29PL032J
128/128/64/32 Megabit (8/8/4/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write
Flash Memory with Enhanced VersatileIO
TM
Control
Distinctive Characteristics
ARCHITECTURAL ADVANTAGES
128/128/64/32 Mbit Page Mode devices
— Page size of 8 words: Fast page read access from
random locations within the page
Single power supply operation
— Full Voltage range: 2.7 to 3.6 volt read, erase, and
program operations for battery-powered applications
Dual Chip Enable inputs (only in PL129J)
— Two CE# inputs control selection of each half of the
memory space
Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency switching from write to read operations
FlexBank Architecture (PL127J/PL064J/PL032J)
— 4 separate banks, with up to two simultaneous
operations per device
— Bank A:
PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)
PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
— Bank B:
PL127J - 48 Mbit (32 Kw x 96)
PL064J - 24 Mbit (32 Kw x 48)
PL032J - 12 Mbit (32 Kw x 24)
— Bank C:
PL127J - 48 Mbit (32 Kw x 96)
PL064J - 24 Mbit (32 Kw x 48)
PL032J - 12 Mbit (32 Kw x 24)
— Bank D:
PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)
PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
FlexBank Architecture (PL129J)
— 4 separate banks, with up to two simultaneous
operations per device
— CE#1 controlled banks:
Bank 1A:
PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)
Bank 1B:
PL129J - 48Mbit (32Kw x 96)
— CE#2 controlled banks:
Bank 2A:
PL129J - 48 Mbit (32Kw x 96)
Bank 2B:
PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)
Enhanced VersatileI/O
TM
(V
IO
) Control
— Output voltage generated and input voltages
tolerated on all control inputs and I/Os is determined
by the voltage on the V
IO
pin
— V
options at 1.8 V and 3 V I/O for PL127J and
PL129J devices
— 3V V
IO
for PL064J and PL032J devices
SecSi
TM
(Secured Silicon) Sector region
— Up to 128 words accessible through a command
sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
Both top and bottom boot blocks in one device
Manufactured on 110 nm process technology
Data Retention: 20 years typical
Cycling Endurance: 1 million cycles per sector
typical
PERFORMANCE CHARACTERISTICS
High Performance
— Page access times as fast as 20 ns
— Random access times as fast as 55 ns
Power consumption (typical values at 10 MHz)
— 45 mA active read current
— 17 mA program/erase current
— 0.2 μA typical standby mode current
SOFTWARE FEATURES
Software command-set compatible with JEDEC
42.4 standard
— Backward compatible with Am29F, Am29LV,
Am29DL, and AM29PDL families and MBM29QM/RM,
MBM29LV, MBM29DL, MBM29PDL families
CFI (Common Flash Interface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or
program operations in other sectors of same bank
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL064J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J55 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J60 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J65 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL129N | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FAI000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FAI002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FAI003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FAIW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
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