參數資料
型號: S29GL064A10BAIW12
廠商: SPANSION LLC
元件分類: PROM
英文描述: 4M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: FBGA-64
文件頁數: 76/97頁
文件大?。?/td> 3490K
代理商: S29GL064A10BAIW12
76
S29GL-A MirrorBit Flash Family
S29GL-A_00_A5 January 11, 2006
Prel imi n ary
Notes:
1. Not 100% tested.
2. See the Erase And Programming Performance on page 87 for more information.
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once programming resumes
(that is, the program resume command is written). If the suspend command was issued after tPOLL, status data is available immediately
after programming resumes. See Figure 16, on page 79.
Table 38. Erase and Program Operations-S29GL064A
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
10
11
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit
polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
35
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low) Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
Write Buffer Program Operation (Note 2, Note 3)
Typ
240
s
Single Word Program Operation (Note 2)Typ
60
Accelerated Single Word Program Operation (Note 2)Typ
54
tWHWH2
Sector Erase Operation (Note 2)Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time Note 1)Min
50
s
tBUSY
WE# High to RY/BY# Low
Min
90
100
110
ns
tPOLL
Program Valid before Status Polling
Max
4
s
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