參數(shù)資料
型號(hào)： S29GL064A10BAIW12
廠商： SPANSION LLC
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： FBGA-64
文件頁(yè)數(shù)： 46/97頁(yè)
文件大?。?/td> 3490K
代理商： S29GL064A10BAIW12
48
S29GL-A MirrorBit Flash Family
S29GL-A_00_A5 January 11, 2006
Prel imi n ary
Note: CFI data related to VCC and time-outs may differ from actual VCC and time-outs of the product. Please consult the Ordering
Information tables to obtain the VCC range for particular part numbers. Please consult the Erase and Programming Performance table
for typical timeout specifications.
Table 26. CFI Query Identification String
Addresses (x16)
Addresses (x8)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 27.
System Interface String
Addresses (x16)
Addresses (x8)
Data
Description
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0007h
Reserved for future use
20h
40h
0007h
Typical timeout for Min. size buffer write 2N
s (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0001h
Reserved for future use
24h
48h
0005h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 28. Device Geometry Definition (Sheet 1 of 2)
Addresses (x16)
Addresses (x8)
Data
Description
27h
4Eh
00xxh
Device Size = 2N byte
0017h = 64 Mb, 0016h = 32Mb, 0015h = 16Mb
28h
29h
50h
52h
000xh
0000h
Flash Device Interface description (refer to CFI publication 100)
0000h = x8-only bus devices
0001h = x16-only bus devices
0002h = x8/x16 bus devices
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
00xxh
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
00x0h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
0000h, 0020h, 0000h, 0007h = 16 Mb (-R1, -R2)
007Fh, 0000h, 0020h, 0000h = 32 Mb (-R1, -R2)
003Fh, 0000h, 0001h = 32 Mb (-R3, R4)
007Fh, 0000h, 0020h, 0000h = 64 Mb (-R1, -R2, -R8, -R9)
007Fh, 0000h, 0000h, 0001h = 64 Mb (-R3, -R4, -R5, -R6, -R7)
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S29GL064A10FFIR30 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 100NS 64BGA - Trays
S29GL064A10TAIR42 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 100NS 48TSOP - Tape and Reel
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