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參數(shù)資料
| 型號： | RLD03N06CLE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管) |
| 中文描述： | 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 93K |
| 代理商： | RLD03N06CLE |
6-426
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
PSPICE Electrical Model
SUBCKT RLD03N06CLE 2 1 3;
CA 12 8 0.547e-9
CB 15 14 0.547e-9
CIN 6 8 0.301e-9
rev 4/18/94
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 20 17 18 66.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.96e-9
LSOURCE 3 7 2.96e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
QCONTROL 20 70 7 QMOD 1
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1.123
RGATE 9 20 3200
RIN 6 8 1e9
RSOURCE1 8 70 RDSMOD 1.12
RSOURCE2 70 7 RSMOD 2.16
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.22
.MODEL DBDMOD D (IS = 7.97e-17 RS = 1.82 TRS1 = 3.91e-3 TRS2 = 1.24e-5 CJO = 3.00e-10 TT = 1.83e-7)
.MODEL DBKMOD D (RS = 3150 TRS1 =0 TRS2 = 0)
.MODEL DESD1MOD D (BV = 13.54 TBV1 = 0 TBV2 = 0 RS = 45.5 TRS1 = 0 TRS2 = 0)
.MODEL DESD2MOD D (BV = 11.46 TBV1 = -7.576e-4 TBV2 = -3.0e-6 RS = 0 TRS1 = 0 TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 74.2e-12 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 1.67 KP = 3.40 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL QMOD NPN (BF =5)
.MODEL RBKMOD RES (TC1 = 4e-4 TC2 = 1.13e-8)
.MODEL RDSMOD RES (TC1 = 6.80e-3 TC2 = 6.5e-6)
.MODEL RSMOD RES (TC1 = 2.95e-3 TC2 = -1e-6)
.MODEL RVTOMOD RES (TC1 = -2.22e-3 TC2 = -1.95e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3 VOFF = -1)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1 VOFF = -3)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.85 VOFF = 2.15)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.15 VOFF = -2.85)
.ENDS
NOTE: For further discussion of the PSPICE model consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records 1991.
1
GATE
LGATE
RGATE
EVTO
18
8
9
+
DESD1
DESD2
12
13
8
14
13
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
R
IN
C
IN
MOS1
MOS2
RDRAIN
DBREAK
EBREAK
DBODY
LDRAIN
DRAIN
RSOURCE2
LSOURCE
SOURCE
RBREAK
RVTO
VBAT
IT
VTO
ESG
DPLCAP
6
6
8
10
5
16
21
11
17
18
8
-
14
5
8
6
8
7
3
17
18
19
91
2
+
+
+
+
+
+
RSOURCE1
70
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
相關PDF資料 |
PDF描述 |
|---|---|
| RLD03N06CLESM | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管) |
| RLP03N06CLE | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RLD03N06CLE | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RLD03N06CLESM | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RLP1N06CLE | 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場效應管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RLD03N06CLESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RLD03N06CLESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RLD06P075B | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:This new radial leaded products are designed specifi cally for Universal Serial Bus (USB |
| RLD06P075BA | 功能描述:可復位保險絲 - RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| RLD06P075BF | 功能描述:可復位保險絲 6V .75A RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
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