參數(shù)資料
型號(hào)： RLD03N06CLE
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁(yè)數(shù)： 8/9頁(yè)
文件大?。?/td> 93K
代理商： RLD03N06CLE
6-425
FIGURE 25. TIME TO 175
o
C IN CURRENT LIMITING
(HEATSINK THERMAL RESISTANCE = 2
o
C/W)
(HEATSINK THERMAL CAPACITANCE = 4J/
o
C)
FIGURE 26. TIME TO 175
o
C IN CURRENT LIMITING
(HEATSINK THERMAL RESISTANCE = 25
o
C/W)
(HEATSINK THERMAL CAPACITANCE = 0.5J/
o
C)
FIGURE 27. TIME TO 175
o
C IN CURRENT LIMITING
(HEATSINK THERMAL RESISTANCE = 10
o
C/W)
(HEATSINK THERMAL CAPACITANCE = 1.0J/
o
C)
FIGURE 28. TIME TO 175
o
C IN CURRENT LIMITING
(HEATSINK THERMAL RESISTANCE = 5
o
C/W)
(HEATSINK THERMAL CAPACITANCE = 2.0J/
o
C)
FIGURE 29. TIME TO 175
o
C IN CURRENT LIMITING
(HEATSINK THERMAL RESISTANCE = 2
o
C/W)
(HEATSINK THERMAL CAPACITANCE = 4J/
o
C)
Typical Performance Curves
(Continued)
10
8
6
4
2
0
50
70
90
30
10
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
STARTING T
J
= 125
o
C
STARTING T
J
= 150
o
C
STARTING T
J
= 100
o
C
STARTING T
J
= 75
o
C
10
8
6
4
2
0
50
70
90
30
10
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
STARTING T
J
= 75
o
C
STARTING T
J
= 100
o
C
STARTING T
J
= 125
o
C
STARTING T
J
= 150
o
C
10
8
6
4
2
0
50
70
90
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
10
STARTING T
J
= 100
o
C
STARTING T
J
= 125
o
C
STARTING T
J
= 150
o
C
STARTING T
J
= 75
o
C
10
8
6
4
2
0
50
70
90
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
10
STARTING T
J
= 125
o
C
STARTING T
J
= 150
o
C
STARTING T
J
= 75
o
C
STARTING T
J
= 100
o
C
10
8
6
4
2
0
50
70
90
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
10
STARTING T
J
= 125
o
C
STARTING T
J
= 150
o
C
STARTING T
J
= 75
o
C
STARTING T
J
= 100
o
C
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
相關(guān)PDF資料
PDF描述
RLD03N06CLESM 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管)
RLP03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLESM 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLP1N06CLE 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RLD03N06CLESM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RLD03N06CLESM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
RLD06P075B 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:This new radial leaded products are designed specifi cally for Universal Serial Bus (USB
RLD06P075BA 功能描述:可復(fù)位保險(xiǎn)絲 - RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C
RLD06P075BF 功能描述:可復(fù)位保險(xiǎn)絲 6V .75A RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*