參數(shù)資料
型號： RLD03N06CLE
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應(yīng)管)
中文描述： 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 3/9頁
文件大?。?/td> 93K
代理商： RLD03N06CLE
6-420
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. SELF-CLAMPED INDUCTIVE SWITCHING
FIGURE 5. SATURATION CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
I
D
,
0.1
1
175
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
25
o
C
DC
T
C
= 25
o
C, T
J
= MAX RATED
OPERATION IN THIS
AREA IS LIMITED BY
JUNCTION TEMPERATURE
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.01
0.02
0.05
0.1
0.2
0.5
SINGLE PULSE
t
AV
, TIME IN CLAMP (s)
0.01
0.1
1
10
I
(
,
0.1
1
25
o
C
50
o
C
75
o
C
0.001
100
o
C
125
o
C
150
o
C
TEMPERATURES LISTED ARE STARTING
JUNCTION TEMPERATURES
T
C
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
D
,
0
0.10
0.20
0.30
0
1
2
3
4
5
V
GS
= 3V
V
GS
= 4V
V
GS
= 7.5V
V
GS
= 5V
0.40
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
相關(guān)PDF資料
PDF描述
RLD03N06CLESM 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應(yīng)管)
RLP03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLESM 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLP1N06CLE 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RLD03N06CLESM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RLD03N06CLESM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
RLD06P075B 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:This new radial leaded products are designed specifi cally for Universal Serial Bus (USB
RLD06P075BA 功能描述:可復(fù)位保險絲 - RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C
RLD06P075BF 功能描述:可復(fù)位保險絲 6V .75A RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C
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