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參數(shù)資料
| 型號： | RLD03N06CLE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管) |
| 中文描述： | 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 93K |
| 代理商： | RLD03N06CLE |
6-421
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. NORMALIZED DRAIN LIMITING CURRENT vs
JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
25
o
C
175
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
2
3
4
5
1
0
0.30
0.40
I
D
,
-55
o
C
0.50
0.60
0.20
0.10
PULSE TEST
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
, JUNCTION TEMPERATURE (
o
C)
0
-80
0.5
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
N
I
D
= 0.10A
V
GS
= 5V,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
T
J
, JUNCTION TEMPERATURE (
o
C)
-80
-40
0
40
80
120
200
160
0
0.5
1.0
1.5
2.0
T
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
S
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 10mA
300
100
00
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
C
C
RSS
200
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
N
2.0
1.0
0.5
0
-80
1.5
T
J
, JUNCTION TEMPERATURE (
o
C)
-40
0
40
80
120
160
200
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
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PDF描述 |
|---|---|
| RLD03N06CLESM | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管) |
| RLP03N06CLE | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RLD03N06CLE | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RLD03N06CLESM | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RLP1N06CLE | 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場效應管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RLD03N06CLESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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