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參數(shù)資料
| 型號(hào)： | RLP1N06CLE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 1.5 A, 55 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | RLP1N06CLE |
6-428
File Number
2839.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RLP1N06CLE
1A, 55V 0.750 Ohm,Voltage Clamping,
Current Limited, N-Channel Power
MOSFET
The RLP1N06CLE is an intelligent monolithic power circuit
which incorporates a lateral bipolar transistor, resistors,
zener diodes, and a PowerMOS transistor. The current
limiting of this device allows it to be used safely in circuits
where it is anticipated that a shorted load condition may be
encountered. The drain to source voltage clamping offers
precision control of the circuit voltage when switching
inductive loads. Logic level gates allow this device to be fully
biased on with only 5V from gate to source. Input protection
is provided for ESD up to 2kV.
Formerly developmental type TA09880.
Features
1A, 55V
r
DS(ON)
= 0.750
I
LIMIT
at 150
o
C = 1.1A to 1.5A Maximum
Built-in Voltage Clamp
Built-in Current Limiting
ESD Protected, 2kV Minimum
Controlled Switching Limits EMI and RFI
175
o
C Rated Junction Temperature
Logic Level Gate
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RLP1N06CLE
TO-220AB
L1N06CLE
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
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