參數(shù)資料
型號： RLP1N06CLE
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場效應(yīng)管)
中文描述： 1.5 A, 55 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 6/7頁
文件大?。?/td> 47K
代理商： RLP1N06CLE
6-433
Detailed Description
Temperature Dependence of Current Limiting and
Switching Speed
The RLP1N06CLE is a monolithic power device which
incorporates a logic level PowerMOS transistor with a resistor
in series with the source. The base and emitter of a lateral
bipolar transistor is connected across this resistor, and the
collector of the bipolar transistor is connected to the gate of
the PowerMOS transistor. When the voltage across the
resistor reaches the value required to forward bias the emitter
base junction of the bipolar transistor, the bipolar transistor
“turns on”. A series resistor is incorporated in series with the
gate of the PowerMOS transistor allowing the bipolar
transistor to drive the gate of the PowerMOS transistors to a
voltage which just maintains a constant current in the
PowerMOS transistor. Since both the resistance of the resistor
in series with the PowerMOS transistor source and voltage
required to forward bias the base emitter junction of the
bipolar transistor vary with the temperature, the current at
which the device limits is a function of temperature. This
dependence is shown in figure 2.
The resistor in series with the gate of the PowerMOS
transistor results in much slower switching than in most
PowerMOS transistors. This is an advantage where fast
switching can cause EMI or RFI. The switching speed is very
predictable, and a minimum as well as maximum fall time is
given in the device characteristics for this type.
DC Operation of the RLP1N06CLE
The limit of the drain to source voltage for operation in
current limiting on a steady state (DC) basis is shown as
Figure 11. The dissipation in the device is simply the applied
drain to source voltage multiplied by the limiting current. This
NOTE: Heatsink thermal resistance = 10
o
C/W
Heatsink thermal capacitance = 1j/
o
C
FIGURE 19. TIME TO 175
o
C IN CURRENT LIMITING
NOTE: Heatsink thermal resistance = 25
o
C/W
Heatsink thermal capacitance = 0.5j/
o
C
FIGURE 20. TIME TO 175
o
C IN CURRENT LIMITING
NOTE: No external heatsink
FIGURE 21. TIME TO 175
o
C IN CURRENT LIMITING
Typical Performance Curves
Unless Otherwise Specified
(Continued)
8
6
4
2
0
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
10
T
o
C
R
θ
JC
=
4.17
o
C/W
125
o
C
100
o
C
75
o
C
25
STARTING
TEMP = 25
o
C
150
o
C
50
o
C
8
6
4
2
0
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
10
T
o
C
R
θ
JC
=
4.17
o
C/W
125
o
C
100
o
C
75
o
C
25
STARTING
TEMP = 25
o
C
50
o
C
150
o
C
8
6
4
2
0
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
10
T
o
C
R
θ
JA
=
80
o
C/W
125
o
C
100
o
C
75
o
C
25
STARTING
TEMP = 25
o
C
150
o
C
RLP1N06CLE
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