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參數(shù)資料
| 型號： | RLP1N06CLE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場效應(yīng)管) |
| 中文描述： | 1.5 A, 55 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 47K |
| 代理商： | RLP1N06CLE |
6-431
FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. SWITCHING TEST CIRCUIT
FIGURE 11. DC OPERATION IN CURRENT LIMITING
NOTE: Heatsink thermal resistance = 2
o
C/W
FIGURE 12. MAXIMUM V
DS
vs T
A
IN CURRENT LIMITING
Typical Performance Curves
Unless Otherwise Specified
(Continued)
2.0
1.6
1.2
0.8
0.4
050
-25
0
T
J
, JUNCTION TEMPERATURE (
o
C)
25
50
75
100
125
150
175
V
GS
= V
DS
I
D
= 250
μ
A
N
2.0
1.5
1.0
0.5
050
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 20mA
N
B
300
50
00
10
25
C
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
200
100
5
15
20
250
C
ISS
C
OSS
C
RSS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
V
GS
0V
R
GS
R
L
DUT
+
-
V
GS
V
DS
20
15
10
5
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
V
D
,
175
25
T
J
= 175
o
C
I
LIM
= 1.35A
R
θ
JC
= 4.17
o
C/W
1
o
C/W
25
o
C/W
HSTR = 0
o
C/W
10
o
C/W
5
o
C/W
2
o
C/W
FREE AIR R
θ
JA
= 80
o
C/W
60
40
20
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
V
D
,
175
80
T
J
= 175
o
C, I
LIM
= 1.35A, R
θ
JC
= 4.17
o
C/W
MAX PULSE WIDTH = 100ms
DUTY CYCLE = 20%
50%
10%
5%
2%
RLP1N06CLE
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